1.

Conference Proceedings
Conference Proceedings
1. Recent Advances in Rapid Vapor-Phase Densification of Refractory Composites
Golecki, I.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.547-554,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5
2.

Conference Proceedings
Conference Proceedings
2. Recent Advances in Rapid Dendification of Thick, Refractory Composites by Inductively-Heated, Thermal-Gradient, Flowing-Gas, Isobaric, Chemical Vapor Infiltration
Golecki, I.
Pub. info.: Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11.  pp.568-575,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-25
3.

Conference Proceedings
Conference Proceedings
3. EPITAXIAL MONOCRYSTALLINE SiC FILMS GROWN ON Si BY LOW-PRESSURE CHEMICAL VAPOR DEPOSITION AT 750°C
Golecki, I. ; Reidinger, F. ; Marti, J.
Pub. info.: Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.519-524,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 242
4.

Conference Proceedings
Conference Proceedings
4. PROPERTIES OF SINGLE-CRYSTAL SILICON FILMS ON AMORPHOUS SiO2 ON SINGLE-CRYSTAL CUBIC ZIRCONIA SUBSTRATES
Golecki, I. ; Maddox, R. L. ; Glass, H. L> ; Lin, a. L. ; Manasevit, H. M
Pub. info.: Applied materials characterization : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.37-46,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 48
5.

Conference Proceedings
Conference Proceedings
5. PROPERTIES OF SINGLE-CRYSTALLINE SiC FILMS GROWN ON Si BY LOW-PRESSURE CHEMICAL VAPOR DEPOSITION AT 750°C
Golecki, I. ; Marti, J. ; Reidinger, F.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.445-450,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
6.

Conference Proceedings
Conference Proceedings
6. Si-ON-SAPPHIRE AND Si IMPLANTED WITH Zr IONS: LATTICE LOCATION, SOLID PHASE EPITAXIAL REGROWTH AND ELECTRICAL PROPERTIES
Golecki, I. ; Suni, I,
Pub. info.: Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.541-546,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 14
7.

Conference Proceedings
Conference Proceedings
7. BURIED SiC LAYERS IN BULK SILICON AND SILICON-ON-SAPPHIRE PRODUCED BY CARBON ION IMPLANTATION
Kroko, L. ; Golecki, I. ; Glass, H. L.
Pub. info.: Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.323-328,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 45