1.

Conference Proceedings
Conference Proceedings
1. EPITAXIAL MONOCRYSTALLINE SiC FILMS GROWN ON Si BY LOW-PRESSURE CHEMICAL VAPOR DEPOSITION AT 750°C
Golecki, I. ; Reidinger, F. ; Marti, J.
Pub. info.: Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.519-524,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 242
2.

Conference Proceedings
Conference Proceedings
2. PROPERTIES OF SINGLE-CRYSTALLINE SiC FILMS GROWN ON Si BY LOW-PRESSURE CHEMICAL VAPOR DEPOSITION AT 750°C
Golecki, I. ; Marti, J. ; Reidinger, F.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.445-450,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282