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Conference Proceedings

1. Effects of localization in CdTe-based quantum well structures

Godlewski,M. ; Ivanov,V.Yu ; Khachapuridze,A. ; Narkowicz,R. ; Phillips,M.R.

Pub. info.:	Optical organic and inorganic materials, 16-19 August, 2000, Vilnius, Lithuania. pp.86-91, 2000. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4415

Conference Proceedings

2. Optically Detected Cyclotron Resonance for Defect Characterization

Godlewski,M. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1353-1358, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

3. On the origin of yellow donor-acceptor pair emission iu GaN

Godlewski,M. ; Ivanov,V.Yu. ; Kaminska,A. ; Zuo,H.Y. ; Goldys,E.M. ; Tansley,T.L. ; Barski,A. ; Rossner,U. ; Rouvicre,J.L. ; Arlery,M. ; Grzegory,I. ; Suski,T. ; Porowski,S. ; Bergman,J.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1149-1154, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. Optical and Structural Studies of GaN Epilayers

Godlewski,M.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.165-170, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

5. Role of localization effects in GaN and InGaN

Godlewski,M. ; Goldys,E.M.

Pub. info.:	Smart optical inorganic structures and devices : 16-19 August 2000, Vilnius, Lithuania. pp.99-108, 2000. Bellingham, Washington. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4318

Conference Proceedings

6. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates

Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1343-1346, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Recombination Dynamics of Unthermalised Excitons in Quantum Well Structures of II-VI Semiconductors

Godlewski,M.

Pub. info.:	Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998. pp.197-204, 1999. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	297-298

Conference Proceedings

8. Dynamics of Microwave Induced Changes of Photoluminescence of 2D Carriers in Modulation Doped Structures of GaAs/AlGaAs

Godlewski,M. ; Khachepuridze,A. ; Ivanov,V.Yu.

Pub. info.:	Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998. pp.229-232, 1999. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	297-298

Conference Proceedings

9. Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP

Monemar,B. ; Chen,W.M. ; Godlewski,M.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.769-774, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

10.

Conference Proceedings

10. Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques

Awadelkarim,O.O. ; Godlewski,M. ; Monemar,B.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.821-826, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

11.

Conference Proceedings

11. Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni)and ZnSxSe1-x(Ni)Alloys

Surkova,T.P. ; Giriat,W. ; Godlewski,M. ; Kaczor,P. ; Surma,M. ; Permogorov,S.A. ; Tenishev,L.N.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.749-754, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

12.

Conference Proceedings

12. Exciton-Phonon Interaction in Quantum Well Structures of CdTe/CdMnTe and CdMnTe/CdMgTe

Narkowicz,R. ; Godlewski,M.

Pub. info.:	Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998. pp.245-248, 1999. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	297-298

13.

Conference Proceedings

13. A New Bistable Shallow Thermal Donor in Al-Doped Si

Kaczor,P. ; Godlewski,M. ; Gregorkiewicz,T.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1185-1190, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

14.

Conference Proceedings

14. Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe

Surma,M. ; Zakrzewski,A.J. ; Godlewski,M.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.761-766, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

15.

Conference Proceedings

15. Auger type nonradiative recombination processes in bulk and quantum well structures of II-VI semiconductors containing transition metal ions

Godlewski,M. ; Surma,M. ; Zakrewski,A.J. ; Wojtowicz,T. ; Karczewski,G. ; Kossut,J. ; Bergman,J.P. ; Monemar,B.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1677-1682, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

16.

Conference Proceedings

16. Defect related recombination processes in low-dimensional structures of ZnCdSe/ZnSe,CdTe/CdMnTe and GaAs/AlGaAs

Godlewski,M. ; Hommel,D. ; Wojtowicz,T. ; Karczewski,G. ; Kossut,J. ; Reginski,K. ; Bugajski,M. ; Bergman,J.P. ; Monemar,B.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1665-1670, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

17.

Conference Proceedings

17. Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs

Kaczor,P. ; Zyikiewicz,Z.R. ; Dobaczewski,L. ; Godlewski,M. ; Mandray,A. ; Huant,S. ; Portal,J.-C.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1093-1098, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

18.

Conference Proceedings

18. High Spectral Resolution Study of Shallow Donors in GalnAs

Karpinska,K. ; Dedulewicz,S. ; Godlewski,M.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.681-686, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

19.

Conference Proceedings

19. Defect Related Recombination Processes in II-VI Quantum Wells

Godlewski,M. ; Bergman,J.P. ; Monemar,B. ; Koziarska,B. ; Suchocki,A. ; Karczewski,G. ; Wojtowicz,T. ; Kossut,J. ; Waag,A. ; Hommel,D.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.455-460, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

20.

Conference Proceedings

20. Optically detected cyclotron resonance studies of erbium and ytterbium doped InP

Godlewski,M. ; Liesert,B.J.HeijrDink ; Gregorkiewicz,T. ; Ammerlaan,C.A.J.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.683-688, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

21.

Conference Proceedings

21. Interstitial and substitutional Mn in GaAs and GaP:magnetic resonance studies

Gisbergen,S.J.C.H.M.Van ; Ezhevskii,A.A. ; Godlewski,M. ; Gregorkiewicz,T. ; Ammerlaan,C.A.J.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.701-706, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

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