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11 results

Conference Proceedings

1. AlxGal-xN-Based UV Photodetectors and Waveguides

Omnes, F. ; Monroy, E. ; Beaumont, B. ; Dogheche, E.-H. ; Calle, F. ; Munoz, E. ; Gibart, P.

Pub. info.:	Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium. pp.205-219, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-1

Conference Proceedings

2. Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

Goodman, S. A. ; Auret, F. D. ; Koschnick, F. K. ; Spaeth, J-M. ; Beaumont, B. ; Gibart, P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.12.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

3. Electrical Characterization of Sputter Deposition Induced Defects in n-GaN

Auret, F. D. ; Goodman, S. A. ; Koschnick, F. K. ; Spaeth, J-M. ; Beaumont, B. ; Gibart, P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.13.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

4. Low Frequency Noise in n-Type Gallium Nitride

Dyakonova, N. ; Levinshtein, M. ; Contreras, S. ; Knap, W. ; Beaumont, B. ; Gibart, P.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.21-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

5. Direct Observation of Atomic Structures of Defects in GaN by High-Resolution Z-Contrast STEM

Xin, Y. ; Pennycook, S. J. ; Browing, N. D. ; Nellist, P. D. ; Sivanathan, S. ; Beaumont, B. ; Faurie, J-P. ; Gibart, P.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.781-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Defects Created by 25 keV Hydrogen Implantation in n-Type GaN

Auret, F.D. ; Meyer, W.E. ; Laarhoven, H.A. van ; Goodman, S.A. ; Legodi, M.J. ; Beaumont, B. ; Gibart, P.

Pub. info.:	GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.. pp.271-276, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	693

Conference Proceedings

7. Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE

Leroux, M. ; Beaumont, B. ; Grandjean, N. ; Massies, J. ; Gibart, P.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.695-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

8. Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

Benyoucef, M. ; Kuball, M. ; Beaumont, B. ; Bousquet, V. ; Gibart, P.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.109-114, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

9. High Quality GaN on Si(111) Using (AIN/GaN)x Superlattice and Maskless ELO

Lahreche, H. ; Bousquet, V. ; Laugt, M. ; Tottereau, O. ; Vennegues, P. ; Beaumont, B. ; Gibart, P.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1487-1490, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. A TEM study of GaN grown by ELO on (0001) 6H-Sic

Ruterana, P. ; Beaumont, B. ; Gibart, P. ; Melnik, Y.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W2.5.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

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