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10 results

Conference Proceedings

1. Co-Doping of Er-Doped SiC with Oxygen - A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?

Gerstmann, U. ; Rauls, E. ; Sanna, S. ; Frauenheim, T. ; Obethof, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.655-658, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC

Pinheiro, M.V.B. ; Rauls, E. ; Gerstmann, U. ; Greulich-Weber, S. ; Spaeth, J.M. ; Overhof, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.551-554, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. New Aspects in n-type Doping of SiC with Phosphorus

Rauls, E. ; Gerstmann, U. ; Greulich-Weber, S. ; Semmelroth, K. ; Pensl, G. ; Haller, E.E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.609-612, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC

Kalabukhova, E.N. ; Lukin, S.N. ; Savchenko, D.V. ; Mitchel, W.C. ; Greulich-Weber, S. ; Rauls, E. ; Gerstmann, U.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.559-562, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory

Gerstmann, U. ; Gali, A. ; Deak, P. ; Frauenheim, Th. ; Overhof, H.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.711-714, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

6. Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC

Gerstmann, U. ; Rauls, E. ; Overhof, H. ; Frauenheim, T.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.501-506, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

7. The VsiCsi(SicCsi) Complex in Electron-Irradiated 6H-SiC

Pinheiro, M. V. B. ; Rauls, E. ; Gerstmann, U. ; Greulich-Weber, S. ; Spaeth, J. M.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.477-480, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. A New Model for the DI-Luminescence in 6H-SiC

Rauls, E. ; Gerstmann, U. ; Pinheiro, M. V. B. ; Greulich-Weber, S. ; Spaeth, J. M.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.465-468, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Nitrogen-Vacancy Complexes in SiC ? Final Annealing Products of the Silicon Vacancy?

Gerstmann, U. ; Rauls, E. ; Frauenheim, Th. ; Overhof, H.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.481-486, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

10.

Conference Proceedings

10. A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi

Deak, P. ; Aradi, B. ; Gali, A. ; Gerstmann, U. ; Choyke, W.J.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.523-526, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

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