1.

Conference Proceedings
Conference Proceedings
1. Signature of the-Negative Carbon Vacancy-Antisite Complex
Bockstedte, M. ; Gali, A. ; Umeda, T. ; Son, N.T. ; Isoya, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.539-542,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Divacancy and Its Identification: Theory
Gali, A. ; Bockstedte, M. ; Son, N.T. ; Umeda, T. ; Isoya, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.523-526,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Son, N.T. ; Umeda, T. ; Isoya, J. ; Gali, A. ; Bockstedte, M. ; Magnusson, B. ; Ellison, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.527-530,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Silicon Carbide: A Playground for 1D-Modulation Electronics
Deak, P. ; Buruzs, A. ; Gali, A. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.355-358,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Shallow P Donors in 3C-, 4H- and 6H-SiC
Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.593-596,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
Yan, F. ; Devaty, R.P. ; Choyke, W.J. ; Gali, A. ; Bhat, I.B. ; Larkin, D.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.585-588,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
Hornos, T. ; Gali, A. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.605-608,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects
Knaup, J. M. ; Deak, P. ; Gali, A. ; Hajnal, Z. ; Frauenheim, T. ; Choyke, J. W.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.569-572,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
Gali, A. ; Hornos, T. ; Deak, P. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.519-522,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Electrical Activity of Isolated Oxygen Defects in SiC
Gali, A. ; Heringer, D. ; Deak, P. ; Hajnal, Z. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.463-466,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
11.

Conference Proceedings
Conference Proceedings
11. Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
Rauls, E. ; Hajnal, Z. ; Gali, A. ; Deak, P. ; Frauenheim, T.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.435-438,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
12.

Conference Proceedings
Conference Proceedings
12. Boron Centers in 4H-SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Rauls, E. ; Frauenheim, T. ; Son, N.T.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.455-458,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
13.

Conference Proceedings
Conference Proceedings
13. Theory of Hydrogen in Silicon Carbide
Deak, P. ; Gali, A. ; Aradi, B.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.421-426,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
14.

Conference Proceedings
Conference Proceedings
14. Dopant-Related Complexes in SiC
Gali, A. ; Miro, J. ; Deak, P. ; Devaty, R. P. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.795-798,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
15.

Conference Proceedings
Conference Proceedings
15. Vacancies and Their Complexes with H in SiC
Deak, P. ; Gali, A. ; Aradi, B. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.817-820,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
16.

Conference Proceedings
Conference Proceedings
16. The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
Gerstmann, U. ; Gali, A. ; Deak, P. ; Frauenheim, Th. ; Overhof, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.711-714,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
17.

Conference Proceedings
Conference Proceedings
17. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
19.

Conference Proceedings
Conference Proceedings
19. Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
Gali, A. ; Deak, P. ; Rauls, E. ; Ordejon, P. ; Carlsson, F.H.C. ; Ivanov, I.G. ; Son, N.T. ; Janzen, E. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.443-448,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
Yan, F. ; Devaty, R. P. ; Choyke, W. J. ; Gali, A. ; Schmid, F. ; Pensl, G. ; Wagner, G.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.493-496,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
21.

Conference Proceedings
Conference Proceedings
21. Calculation of Hyperfine Constants of Defects in 4H-SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E. ; von Bardeleben, H.J. ; Monge, J.-L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.511-514,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
22.

Conference Proceedings
Conference Proceedings
22. Theoretical Investigation of an Intrinsic Defect in SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.477-480,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
Deak, P. ; Gali, A. ; Hajnal, Z. ; Frauenheim, Th. ; Son, N.T. ; Janzen, E. ; Choyke, W.J. ; Ordejon, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.535-538,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
24.

Conference Proceedings
Conference Proceedings
24. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Theoretical Study of Antisite Aggregation in α-SiC
Rauls, E. ; Gali, A. ; Deak, P. ; Frauenheim, Th.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.491-494,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
26.

Conference Proceedings
Conference Proceedings
26. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
Deak, P. ; Aradi, B. ; Gali, A. ; Gerstmann, U. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.523-526,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
28.

Conference Proceedings
Conference Proceedings
28. Theoretical Investigation of an Intrinsic Defect in SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.477-480,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393