1.

Conference Proceedings
Conference Proceedings
1. The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
Fujisawa, H. ; Tsuji, T. ; Nishiura, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1297-1300,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
Tsuchida, H. ; Tsuji, T. ; Kamata, I. ; Jikimoto, T. ; Fujisawa, H. ; Ogino, S. ; Izumi, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.131-134,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393