1.

Conference Proceedings
Conference Proceedings
1. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
Izumi, S. ; Kamata, I. ; Tawara, T. ; Fujisawa, H. ; Tsuchida, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1085-1088,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
Izumi, S. ; Fujisawa, H. ; Tawara, T. ; Ueno, K. ; Hiraoka, M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.685-688,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436