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Conference Proceedings

1. Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/raman mapping

Kuball, M. ; Benyoucef, M. ; Morrissey, F. H. ; Foxon, C. T.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W12.3.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

2. Studies of Group-III-Nitride Growth on Silicon

Blant, A. V. ; Cheng, T. S. ; Foxon, C. T. ; Bussey, J. C. ; Novikov, S. V. ; Tret'yakov, V. V.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.465-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

3. EXAFS Studies of Group-III Nitrides

Jeffs, N. J. ; Blant, A. V. ; Cheng, T. S. ; Foxon, C. T. ; Bailey, C. ; Harrison, P. G. ; Mosselmans, J. F. W. ; Dent, A. J.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.519-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

4. Homoepitaxial and Heteroepitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

Foxon, C. T. ; Cheng, T. S. ; Korakakis, D. ; Novikov, S. V. ; Campion, R. P. ; Grzegory, I. ; Porowski, S. ; Albrecht, M. ; Strunk, H. P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G4.11.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

5. Electrical and Optical Characterization of Homojunction Gallium Nitride Light-Emitting Diodes

Laws, G. M. ; Morgan, J. ; Ren, G. B. ; Harrison, I. ; Larkins, E. C. ; Orton, J. W. ; Hooper, S. E. ; Cheng, T. ; Foxon, C. T.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1113-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaN

Brown, P. D. ; Tricker, D. M. ; Xin, Y. ; Cheng, T. S. ; Foxon, C. T. ; Evans, D. ; Galloway, S. A. ; Brock, J. ; Humphreys, C. J.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.399-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. TEM and PL Characterization of MBE-Grown Epitaxial GaN/GaAs

Xin, Yan ; Brown, P. D. ; Boothroyd, C. B. ; Preston, A. R. ; Humphreys, C. J. ; Cheng, T. S. ; Foxon, C. T. ; Andrianov, A. V. ; Orton, J. W.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.311-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

8. A TEM Study of the Microstructural Evolution of MBE-Grown GaN

Tricker, David M. ; Brown, Paul D. ; Martin, Graeme. ; Lu, J. ; Westwood, D. I. ; Hill, P. ; Haworth, L. ; MacDonald, J. E. ; Cheng, T. S. ; Foxon, C. T. ; Humphreys, Colin J.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.87-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

9. Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates

Nicholls, J. F. H. ; Gallagher, H. ; Henderson, B. ; Trager-Cowan, C. ; Middleton, P. G. ; O'Donnell, K. P. ; Cheng, T. S. ; Foxon, C. T. ; Chai, B. H. T.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.535-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

10.

Conference Proceedings

10. The Growth of GaN Films by Migration-Enhanced Epitaxy

Hooper, S. E. ; Foxon, C. T. ; Cheng, T. S. ; Jeffs, N. J. ; Ren, G. B. ; Lacklison, D. E. ; Orton, J. W. ; Duggan, G.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.325-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

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