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Homo-epitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor

Author(s):
Eshun, E.
Taylor, C.
Spencer, M. G.
Kornegay, K.
Ferguson, I.
Gurray, A.
Stall, R.
2 more
Publication title:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
572
Pub. Year:
1999
Page(from):
173
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
Language:
English
Call no.:
M23500/572
Type:
Conference Proceedings

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