1.

Conference Proceedings
Conference Proceedings
1. DEFECT MODEL AND GROWTH CHARACTERISTICS OF LOW TEMPERATURE GaAs
Fatemi, M. ; Tadayon, B. ; Dietrich, H.B. ; Tadayon, S.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.137-144,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
2.

Conference Proceedings
Conference Proceedings
2. Relaxation Mechanisms of Strained SiGe Films Bonded to High and Low Viscosity Oxides
Hobart, K.D. ; Kub, F.J. ; Fatemi, M. ; Twigg, M.E. ; Thompson, P.E. ; Kuan, T.S. ; Inoki, C.K.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.85-91,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
3.

Conference Proceedings
Conference Proceedings
3. Increase of Electrical Activation of Si as an Acceptor in GaSb
Tadayon, B. ; Kyono, C. ; Fatemi, M. ; Tadayon, S. ; Dietrich, H.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.126-135,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
4.

Conference Proceedings
Conference Proceedings
4. X-RAY ROCKING CURVE ANALYSIS OF S-IMPLANTED GaAs
Fatemi, M. ; Thompson, P.E. ; Chaudhuri, J. ; Shah, S.
Pub. info.: Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.93-96,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 126
5.

Conference Proceedings
Conference Proceedings
5. STUDY OF INTERFACIAL SHARPNESS AND GROWTH IN (GaAs)m(AlAs)n SUPERLATTICES
Gammon, D. ; Prokes, S. ; Katzer, D.S. ; Shanabrook, B.V. ; Fatemi, M. ; Tseng, W. ; Wilkins, B. ; Dietrich, H.
Pub. info.: Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A..  pp.339-344,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 159
6.

Conference Proceedings
Conference Proceedings
6. HETEROSTRUCTURES OF GaAs AND AlAs ON SILICON: X-RAY ANALYSIS AND EXCIMER LASER ANNEALING
Georgakilas, A. ; Fatemi, M. ; Fotiadis, L. ; Christou, A.
Pub. info.: Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.279-284,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 116
7.

Conference Proceedings
Conference Proceedings
7. Extended Defects in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.199-204,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
8.

Conference Proceedings
Conference Proceedings
8. On scaling the thin film Si thickness of SOI substrates. A Perspective on Wafer Bonding for Thin Film Devices
Hobart, K.D. ; Kub, F.J. ; Twigg, M.E. ; Fatemi, M.
Pub. info.: Progress in SOI structures and devices operating at extreme conditions.  pp.299-308,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 58
9.

Conference Proceedings
Conference Proceedings
9. (13.2) 8:30 - 8:50 AM - Thin Compliant SiGe for Relaxed SiGe and Strained Si Growth
Jernigan, G. G. ; Twigg, M. E. ; Fatemi, M. ; Bassim, N. D. ; Thompson, P. E.(US Naval Research Laboratory)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.857-864,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
10.

Conference Proceedings
Conference Proceedings
10. Structural Characterization of 3C-SiC Films Grown on Si Layers Wafer Bonded to Polycrystalline SiC Substrates
Myers, R.L. ; Hobart, K.D. ; Twigg, M. ; Rao, S. ; Fatemi, M. ; Kub, F.J. ; Saddow, S.E.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.145-148,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
11.

Conference Proceedings
Conference Proceedings
11. Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs
Hobart, K.D. ; Kub, F.J. ; Esser, R. ; Jernigan, G.G. ; Fatemi, M. ; Binari, S.C. ; Katzer, D.S. ; Dietrich, H.B. ; Kipshidze, G. ; Nikishin, S. ; Temkin, H.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
12.

Conference Proceedings
Conference Proceedings
12. Characterization of Low Temperature GaAs
Tadayon, B. ; Twigg, M. ; Fatemi, M. ; Frankel, M. ; Giordana, A. ; Katzer, D.S.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.289-294,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
13.

Conference Proceedings
Conference Proceedings
13. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
Myers, R.L. ; Saddow, S.E. ; Rao, S. ; Hobart, K.D. ; Fatemi, M. ; Kub, F.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1511-1514,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
14.

Conference Proceedings
Conference Proceedings
14. Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.537-542,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
15.

Conference Proceedings
Conference Proceedings
15. Detection of liver lesions by vibro-acoustography
Alizad, A. ; Wold, L. E. ; Greenleaf, J. F. ; Fatemi, M.
Pub. info.: Medical Imaging 2005: Ultrasonic Imaging and Signal Processing.  pp.503-506,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5750
16.

Conference Proceedings
Conference Proceedings
16. Inverse method for estimating elastic modulus of arterial walls
Zhang, X. ; Fatemi, M. ; Greenleaf, J.F.
Pub. info.: Medical Imaging 2004: Physics of Medical Imaging.  pp.226-235,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5368