Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim

Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim

Author(s):

Publication title:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

Title of ser.:

Materials science forum

Ser. no.:

196-201

Pub. Year:

1995

Pt.:

1

Page(from):

549

Page(to):

554

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020219
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	18th
Conf. info. (Venue):	Sendai, Japan
Conf. info. (Date):	1995.07.23-1995.07.28

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