1.

Conference Proceedings
Conference Proceedings
1. ORIGIN AND BEHAVIOR OF MAIN ELECTRON TRAPS IN Si- IMPLANTED GaAs
Fang, Z-Q. ; Yamamoto, H. ; Look, D. C.
Pub. info.: Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A..  pp.93-100,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 184
2.

Conference Proceedings
Conference Proceedings
2. Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy
Fang, Z-Q. ; Look, D. C. ; Kim, W. ; Morkoc, H.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.84.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. An Anomalous Deep Center (Ec-0.31 eV) in Semi-Insulating GaAs
Fang, Z-Q. ; Look, D. C.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.405-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
4.

Conference Proceedings
Conference Proceedings
4. Electron Irradiation-Induced Trap in n-Type GaN
Fang, Z-Q. ; Hemsky, J. W. ; Look, D. C. ; Mack, M. P. ; Molnar, R. J. ; Via, G. D.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.881-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482