1.

Conference Proceedings
Conference Proceedings
1. Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation
Y.K. Sharma ; F. Li ; C.A. Fisher ; M.R. Jennings ; D. Hamilton
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.464-467,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. High Temperature Nitridation of 4H-SiC MOSFETs
H. Rong ; Y.K. Sharma ; T.X. Dai ; F. Li ; M.R. Jennings
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.623-626,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3CSiC(100)/Si
F. Li ; Y.K. Sharma ; M.R. Jennings ; A. Pérez-Tomás ; V.A. Shah
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.667-670,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
S.A.O. Russell ; M.R. Jennings ; T.X. Dai ; F. Li ; D.P. Hamilton ; C.A. Fisher ; Y.K. Sharma ; P.A. Mawby ; A. Pérez-Tomás
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.155-158,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
5.

Conference Proceedings
Conference Proceedings
5. Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS
F. Li ; O. Vavasour ; M. Walker ; D.M. Martin ; Y.K. Sharma ; S.A.O. Russell ; M.R. Jennings ; A. Pérez-Tomás ; P.A. Mawby
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.151-154,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
6.

Conference Proceedings
Conference Proceedings
6. Demonstrating the Instability of SiC Ohmic Contacts and Drain Terminal Metallization Schemes Aged at 300 °C
D.P. Hamilton ; S.A. Hindmarsh ; F. Li ; M.R. Jennings ; S.A.O. Russell ; R.A. McMahon ; P.A. Mawby
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.387-390,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
7.

Conference Proceedings
Conference Proceedings
7. 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
H. Rong ; Y.K. Sharma ; F. Li ; M.R. Jennings ; P.A. Mawby
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.824-827,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780