A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

Author(s):

Rao, S.

Publication title:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

815

Pub. Year:

2004

Page(from):

229

Page(to):

234

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

Language:

English

Call no.:

M23500/815

Type:

Conference Proceedings

Details

TDL ID:	ZA00014457
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Silicon carbide
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.14-2004.04.15

Similar Items:

1 Conference Proceedings Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor Bergamini, F., Rao, S.P., Poggi, A., Tamarri, F., Saddow, S.E., Nipoti, R. Trans Tech Publications	7 Conference Proceedings Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini Materials Research Society
2 Conference Proceedings J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃ Bergamini, F., Rao, S. P., Saddow, S. E., Nipoti, R. Trans Tech Publications	8 Conference Proceedings Post-Implantation Annealing of SiC: Relevance of the Heating Rate R. Nipoti Trans Tech Publications
3 Conference Proceedings Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD Rao, S.P., Bergamini, F., Nipoti, R., Hoff, A.M., Oborina, E., Saddow, S.E. Trans Tech Publications	9 Conference Proceedings Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC R. Nipoti, A. Nath, S. Cristiani, M. Sanmartin, M.V. Rao Trans Tech Publications
4 Conference Proceedings Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications	10 Conference Proceedings Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation Poggi, A., Nipoti, R., Solmi, S., Bersani, M., Vanzetti, L. Trans Tech Publications
5 Conference Proceedings Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature Bergamini, F., Moscatelli, F., Canino, M., Poggi, A., Nipoti, R. Trans Tech Publications	11 Conference Proceedings Structural,Optical and Chemical Characterization of 300℃,MeV Ion Implanted and 1700℃Annealed 6H-SiC Nipoti, R., Carnera, A., Mattei, G. Materials Research Society
6 Conference Proceedings High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC R. Nipoti, A. Nath, M.V. Rao, A. Hallén, F. Mancarella Trans Tech Publications	12 Conference Proceedings Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation U. Grossner, F. Moscatelli, R. Nipoti Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12