1.

Conference Proceedings
Conference Proceedings
1. Studies on Carbon as Alternative p-Type Dopant for Gallium Nitride
Birkle, U. ; Fehrer, M. ; Kirchner, V. ; Einfeldt, S. ; Hommel, D. ; Strauf, S. ; Michler, P. ; Gutowski, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.6.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. MBE Growth of GaN on NdGaO3(101)
Fechtmann, C. ; Kirchner, V. ; Einfeldt, S. ; Heinke, H. ; Hommel, D. ; Lukasiewicz, T. ; Luczynski, Z. ; Baranowski, J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.295-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. Influence of Doping on the Lattice Dynamics of Gallium Nitride
Kaschner, A. ; Siegle, H. ; Hoffmann, A. ; Thomsen, C. ; Birkle, U. ; Einfeldt, S. ; Hommel, D.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.57.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
Einfeldt, S. ; Bottcher, T. ; Hommel, D. ; Selke, H. ; Ryder, P. L. ; Bertram, F. ; Riemann, T. ; Rudloff, D. ; Christen, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy
KrTschil, A. ; Witte, H. ; Lisker, M. ; Christen, J. ; Birkle, U. ; Einfeldt, S. ; Hommel, D. ; Topf, M. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.887-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy
Barabash, R. I. ; Ice, G. E. ; Liu, W. ; Einfeldt, S. ; Hommel, D. ; Roskowski, A. M. ; Davis, R. F.
Pub. info.: Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.115-120,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 875
7.

Conference Proceedings
Conference Proceedings
7. Compositional Fluctuations in AlxGa1-xN Layers Grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy
Kroger, R. ; Einfeldt, S. ; Reitmeier, Z.J. ; Chierchia, R. ; Ryder, P. ; Hommel, D. ; Davis, R.F.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.255-260,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
8.

Conference Proceedings
Conference Proceedings
8. Study of the Origin of Misorientation in GaN Grown by Pendeo-Epitaxy
Zakharov, D.N. ; Liliental-Weber, Z. ; Roskowski, A.M. ; Einfeldt, S. ; Davis, R.F.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.121-126,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
9.

Conference Proceedings
Conference Proceedings
9. Micro-Photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures
Sebald, K. ; Lohmeyer, H. ; Gutowski, J. ; Einfeldt, S. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.299-304,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
10.

Conference Proceedings
Conference Proceedings
10. Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers
Kirchner, V. ; Heinke, H. ; Einfeldt, S. ; Hommel, D. ; Domagala, J. Z. ; Leszczynski, M.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W5.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595