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12 results

Conference Proceedings

1. ROOM-TEMPERATURE CW OPERATION OF SQW LASERS ON Si GROWN WITH AlGaAs/AlGaP INTERMEDIATE LAYERS BY MOCVD

Egawa, T. ; Hayashi, H. ; George, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A.. pp.189-194, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	228

Conference Proceedings

2. CORRELATIONS BETWEEN CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GaAs GROWN ON Si BY MOCVD

Egawa, T. ; Nozaki, S. ; Noto, N. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.273-278, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

3. GaAs/AlGaAs SQW OPTICAL SWITCH ON Si

Yuasa, T. ; Nagashima, Y. ; Egawa, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.363-368, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	281

Conference Proceedings

4. GaN-based Optoelectronic Devices on Si Grown by MOCVD

Ishikawa, H. ; Egawa, T.

Pub. info.:	Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.34-38, 2004. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-02

Conference Proceedings

5. EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si

Nozaki, S. ; Noto, N. ; Okada, M. ; Egawa, T. ; Soga,. T ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.235-240, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

6. GROWTH OF GaAs ON Si USING A1GaP INTERMEDIATE LAYER

Noto, N. ; Nozaki, S. ; Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.247-252, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

7. Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD

Egawa, T. ; Ishikawa, H. ; Yamamoto, K. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1101-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

8. High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y. ; Mita, J. ; Yamada, T. ; Makita, T. ; Kaifu, K. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1511-1514, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Trivalent Ion Conduction in the Sc2(WO4)3 Type Structure

Imanaka, N. ; Kobayashi, Y. ; Egawa, T. ; Tamura, S. ; Adachi, G.

Pub. info.:	Rare earths '98 : proceedings of the International Conference on Rare Earths, held in Fremantle, Western Australia, October 25-30, 1998. pp.331-338, 1999. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	315-317

10.

Conference Proceedings

10. Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD

Egawa, T. ; Ishikawa, H. ; Jimbo, T. ; Umeno, M.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1191-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

11.

Conference Proceedings

11. Optoelectronic Devices on GaAs/Si Grown by MOCVD Technique

Egawa, T. ; Hasegawa, Y. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII). pp.154-174, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-6

12.

Conference Proceedings

12. High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y. ; Mita, J. ; Yamada, T. ; Makita, T. ; Kaifu, K. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1511-1514, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Egawa, T.