1.

Conference Proceedings
Conference Proceedings
1. An Investigation of Vacancy Population During Arsenic Activation in Silicon
Dokumaci, O. ; Gossmann, H-J. ; Jones, K. S. ; Law, M. E.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.151-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
2.

Conference Proceedings
Conference Proceedings
2. Nitrogen Implantation and Diffusion in Silicon
Adam, L. S. ; Law, M. E. ; Dokumaci, O. ; Haddara, Y. ; Murthy, C. ; Park, H. ; Hegde, S. ; Chidambarrao, D. ; Mollis, S. ; Domenicucci, T. ; Dziobkowski, C. ; Jones, K. ; Wong, P. ; Young, R. ; Srinivasan, R.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.277-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
3.

Conference Proceedings
Conference Proceedings
3. Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon
Dokumaci, O. ; Law, M. E. ; Krishnamoorthy, V. ; Jones, K. S.
Pub. info.: Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.167-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 396