LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices
- Author(s):
Di Forte Poisson, M-A. Magis, M. Tordjman, M. Aubry, R. Pesohang, M. Delage, S.L. Persio, J. Di Grimbert, B. Hoel, V. Delos, E. Ducatteau, D. Gaquiere, C. - Publication title:
- GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 798
- Pub. Year:
- 2004
- Page(from):
- 107
- Page(to):
- 112
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997363 [1558997369]
- Language:
- English
- Call no.:
- M23500/798
- Type:
- Conference Proceedings
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