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18 results

Conference Proceedings

1. Acceptor-hydrogen interaction in InAs

Burchard,A. ; Correia,J.G. ; Deicher,M. ; Forkel-Wirth,D. ; Magerle,R. ; Prospero,A. ; Stotzler,A.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1223-1228, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

2. Trapping of Lattice Defects at 111In Atoms in Cold-Worked Copper

Deicher,M. ; Grubel,G. ; Reiner,W. ; Wichert,Th.

Pub. info.:	Vacancies and interstitials in metals and alloys : Proceedings of the International Conference on Vacancies and Interstitials in Metals and Alloys held in Berlin, Germany, September 14-19, 1986. Pt.2 pp.635-640, 1987. Aederlmannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	15-18

Conference Proceedings

3. Radioactive Isotopes in Photoluminescence Experiments:Identification of Defect Levels

Magerle,R. ; Burchard,A. ; Kerle,T. ; Pfeiffer,W. ; Deicher,M.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1503-1508, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

4. Novel luminescent centres in cadmium doped silicon

Frehill,C.A. ; Henry,M.O. ; McGlynn,E. ; Daly,S.E. ; Deicher,M. ; Magerle,R. ; McGuigan,K.G. ; Safanov,A.N. ; Lightowlers,E.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.521-526, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

5. PAC Studies of the Fast Diffuser 100Pd in Lead

Deicher,M. ; Grubel,G. ; Kopp,G. ; Recknagel,E.

Pub. info.:	Vacancies and interstitials in metals and alloys : Proceedings of the International Conference on Vacancies and Interstitials in Metals and Alloys held in Berlin, Germany, September 14-19, 1986. Pt.1 pp.469-474, 1987. Aederlmannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	15-18

Conference Proceedings

6. The photoluminescence of Pt-implanted silicon

Alves,E. ; Bollmann,J. ; Deicher,M. ; Carmo,M.C. ; Henry,M.O. ; Knopf,M.H.A. ; Leitao,J.P. ; Magerle,R. ; McDonagh,C.J.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.473-478, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. Implantation doping and hydrogen passivation of GaN

Burchard,A. ; Deicher,M. ; Forkel-Wirth,D. ; HaLller,E.E. ; Magerle,R. ; Prospero,A. ; Stotzler,A.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1099-1104, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon

Deicher,M. ; Grubel,G. ; Keller,R. ; Recknagel,E. ; Schulz,N. ; Skudlik,H. ; Wichert,Th.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.367-372, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

9. Creation of GaAs antisites in GaAs by transmutation of radioactive 71AsAs to stable 71GaAs

Magerle,R. ; Burchard,A. ; Forkel-Wirth,D. ; Deicher,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.945-950, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

10.

Conference Proceedings

10. The role of caiion vacancy in compensation of II-VI compounds by fast diffusors-example of Cu in CdS

Desnica,U.V. ; Desnica-Frankovic,I.D. ; Magerle,R. ; Burchard,A. ; Deicher,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1347-1352, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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