1.

Conference Proceedings
Conference Proceedings
1. Radioactive Isotopes in Photoluminescence Experiments:Identification of Defect Levels
Magerle,R. ; Burchard,A. ; Kerle,T. ; Pfeiffer,W. ; Deicher,M.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1503-1508,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Doping of ZnSe,ZnTe and CdTe with Group V Elements
Wolf,H. ; Burchard,A. ; Deicher,M. ; Filz,T. ; Jost,A. ; Lauer,St. ; Magerle,R. ; Ostheimer,V. ; Pfeiffer,W. ; Wichert,Th.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.309-314,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. Study of Indium Implanted GaAs:Positron Annihilation and Electrical Measurements
Pfeiffer,W. ; Liszkay,L. ; Burchard,A. ; Deicher,M. ; Magerle,R. ; Ronning,C. ; Saarinen,K. ; Hautojarvi,P.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.305-310,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques
Deicher,M. ; Pfeiffer,W.
Pub. info.: Hydrogen in compound semiconductors.  pp.481-500,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 148-149
5.

Conference Proceedings
Conference Proceedings
5. Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors
Burchard,A. ; Deicher,M. ; Forkel-Wirth,D. ; Freidinger,J. ; Kerle,T. ; Magerle,R. ; Pfeiffer,W. ; Prost,W. ; Wellmann,P. ; Winnacker,A.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.987-991,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201