SILICON CARBIDE SEMICONDUCTOR DEVICE FABRICATION AND CHARACTERIZAION
- Author(s):
- Davis, R.F. ( Colledge of Engineering North Carollna State University )
- Publication title:
- NASA Technical Reports
- Pub. Year:
- 1990
- Issue:
- NASA-CR-186354
- No.:
- G3/76 0266002
- Pt.:
- NAS 1.26:186354
- Paper no.:
- N90-19873
- Page(from):
- 1
- Page(to):
- 35
- Pages:
- 35
- Pub. info.:
- National Aeronautics and Space Adminstration
- Language:
- English
- Type:
- Technical Paper
Similar Items:
Society of Automotive Engineers |
National Aeronautics and Space Adminstration |
2
Technical Paper
Liquid Impingement Cooling of High Power Density Silicon Carbide Semiconductor Devices
American Institute of Aeronautics and Astronautics |
National Aeronautics and Space Administration |
3
Technical Paper
Silicon Carbide Diodes Performance Characterization and Comparison with Silicon Devices
American Institute of Aeronautics and Astronautics |
American Institute of Aeronautics and Astronautics |
National Aeronautics and Space Administration |
National Aeronautics and Space Administration |
National Aeronautics and Space Adminstration |
11
Technical Paper
Advances in Silicorn Carbide Chemical Vapor Deposition (CVD) for Semicondictor Device Fabrication
National Aeronautics and Space Adminstration |
6
Technical Paper
A BRIEF REVIEW OF WROUGHT ALUMINUM ALLOY METAL MATRIX COMPOSITES REINFORCED BY SILICON CARBIDE WHISKERS
National Aeronautics and Space Adminstration |
Society of Automotive Engineering, Inc. |