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22 results

Conference Proceedings

1. Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

Edwards, N. V. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Kern, R. S. ; Liu, H. ; Stall, R. A. ; Wickenden, A. E. ; Doverspike, K. ; Gaskill, D. K. ; Freitas, J. A., Jr. ; Rossow, U. ; Davis, R. F. ; Aspnes, D. E.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.405-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

2. Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures

Perry, W. G. ; Zheleva, T. ; Linthicum, K. J. ; Bremser, M. D. ; Davis, R. F. ; Shan, W. ; Song, J. J.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.847-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

3. Strain Effects on Excitonic Transitions in GaN

Shan, W. ; Hauenstein, R. J. ; Fischer, A. J. ; Song, J. J. ; Perry, W. G. ; Bremser, M. D. ; Davis, R. F. ; Goldenberg, B.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.841-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

4. Ohmic Contact to n-GaN with TiN Diffusion Barrier

Kaminska, E. ; Piotrowska, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Barcz, A. ; Dynowska, E. ; Bremser, M. D. ; Nam, O. H. ; Davis, R. F.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1055-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

5. Relaxation Phenomena in GaN/AlN/6H-SiC Heterostructures

Edwards, N. V. ; Batchelor, A. D. ; Buyanova, I. A. ; Madsen, L. D. ; Bremser, M. D. ; Davis, R. F. ; Aspnes, D. E. ; Monemar, B.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.78.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

6. Detection of Magnetic Resonance on Shallow Donor-Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC

Glaser, E. R. ; Kennedy, T. A. ; Brown, S. W. ; Freitas, J. A., Jr. ; Perry, W. G. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Davis, R. F.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.667-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

7. Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

Nam, O. H. ; Bremser, M. D. ; Ward, B. L. ; Nemanich, R. J. ; Davis, R. F.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.107-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

8. Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers

Nam, O. H. ; Zheleva, T. S. ; Bremser, M. D. ; Thomson, D. B. ; Davis, R. F.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.301-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

9. Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates

Davis, R. F. ; Nam, O-H. ; Zheleva, T. S. ; Bremser, M. D. ; Linthicum, K. J. ; Gehrke, T. ; Rajagopal, P. ; Thomson, D. B. ; Carlson, E. P.

Pub. info.:	III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.. pp.91-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	535

10.

Conference Proceedings

10. Luminescence Related to Stacking Faults in Heteroepitaxially Grown Wurtzite GaN

Albrecht, M. ; Christiansen, S. ; Salviati, G. ; Zanotti-Fregonara, C. ; Rebane, Y. T. ; Shreter, Y. G. ; Mayer, M. ; Pelzmann, A. ; Kamp, M. ; Ebeling, K. J. ; Bremser, M. D. ; Davis, R. F. ; Strunk, H. P.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.293-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

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