1.

Conference Proceedings
Conference Proceedings
1. High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Hull, B.A. ; Das, M.K. ; Richmond, J.T. ; Heath, B. ; Sumakeris, J.J. ; Geil, B.R. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1355-1358,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
Das, M.K. ; Sumakeris, J.J. ; Hull, B.A. ; Richmond, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1329-1334,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes
Levinshtein, M.E. ; Ivanov, P.A. ; Boltovets, M.S. ; Krivutsa, V.A. ; Palmour, J.W. ; Das, M.K. ; Hull, B.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1339-1342,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Silicon Carbide Power Diodes as Radiation Detectors
Phlips, B.F. ; Hobart, K.D. ; Kub, F.J. ; Stahlbush, R.E. ; Das, M.K. ; De Geronimo, G. ; O' Connor, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1465-1468,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
Jenny, J.R. ; Malta, D.P. ; Tsvetkov, V.T. ; Das, M.K. ; McD. Hobgood, H. ; Carter, C.H.Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.31-34,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal
Das, M.K. ; Hull, B.A. ; Krishnaswami, S. ; Husna, F. ; Haney, S. ; Lelis, A.J. ; Scozzie, C.J. ; Scofield, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.967-970,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
Ryu, S.H. ; Krishnaswami, S. ; Hull, B.A. ; Heath, B. ; Das, M.K. ; Richmond, J.T. ; Agarwal, A.K. ; Palmour, J.W. ; Scofield, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1261-1264,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Feldman, L.C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.967-972,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. N2O Processing Improves the 4H-SiC:SiO2 Interface
Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.985-988,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.981-984,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. N2O Processing Improves the 4H-SiC:SiO2 Interface
Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.985-988,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, M.K. ; Lipkin, L.A. ; Palmour, J. ; Saks, N. ; Williams, J.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1195-1198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Feldman, L.C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.967-972,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.981-984,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy
Ghosh, R.N. ; Ezhilvalavan, S. ; Golding, B. ; Mukhopadhyay, S.M. ; Mahadev, N. ; Joshi, P. ; Das, M.K. ; Cooper, J.A., Jr.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
17.

Conference Proceedings
Conference Proceedings
17. Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide
Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Lipkin, L.A. ; Feldman, L.C.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
18.

Conference Proceedings
Conference Proceedings
18. Recent Advances in (0001) 4H-SiC MOS Device Technology
Das, M.K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1275-1280,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
19.

Conference Proceedings
Conference Proceedings
19. High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
Das, M.K. ; Sumakeris, J.J. ; Paisley, M.J. ; Powell, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1105-1108,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Dynamics of Turbulent Compressible Stellar Convection
Chaudhry, A.K. ; Singh, H.P. ; Das, M.K.
Pub. info.: SOHO 6/GONG 98 Workshop on Structure and Dynamics of the Interior of the Sun and Sun-like Stars : 1-4 June 1998, Boston, Massachusetts, USA.  pp.735-740,  1998.  Noordwijk, The Netherlands.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 418
21.

Technical Paper
Technical Paper
21. Laminar Natural Convection in a Complicated Cavity with Spatially Variabel Upper Wall Temperature.
Dalal, A. ; Das, M.K.
Pub. info.: A.S.M.E. paper.  2003.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : HT
Ser. no.: 2003