1.

Conference Proceedings
Conference Proceedings
1. Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R. ; Gila, B.P. ; Onstine, A.H. ; Pearton, S.J. ; Kim, J. ; Luo, B. ; Mehandru, R. ; Ran, F. ; Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Irokawa, Y.
Pub. info.: Dielectrics in emerging technologies : proceedings of the international symposium.  pp.330-341,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-1
2.

Conference Proceedings
Conference Proceedings
2. Challenges Facing GaN-Based Electronic Devices
Via, G.D. ; Crespo, A. ; DeSalvo, G. ; Jenkins, T. ; King, J. ; Sewell, J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.3-17,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
3.

Conference Proceedings
Conference Proceedings
3. Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors
Dabiran, A.M. ; Osinsky, A. ; Chow, P.P. ; Zhang, Z. ; Madjar, A. ; Osinsky, S. ; Hwang, J.C.M. ; Fitch, R.C. ; Gillespie, J. ; Jessen, G. ; Moser, N. ; Crespo, A.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.380-385,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
4.

Conference Proceedings
Conference Proceedings
4. Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment
Moser, N. ; Fitch, R. ; Via, D. ; Crespo, A. ; Yannuzzi, M. ; Jessen, G. ; Gillespie, J. ; Luo, B. ; Ren, F. ; Abernathy, C. ; Pearton, S. ; Gila, B.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.57-67,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
5.

Conference Proceedings
Conference Proceedings
5. Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics
Fitch, R. ; Gillespie, J. ; Via, D. ; Agresta, D. ; Jenkins, T. ; Jessen, G. ; Moser, N. ; Crespo, A. ; Dabiran, A. ; Osinsk, A.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.459-464,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
6.

Conference Proceedings
Conference Proceedings
6. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
Ren, F. ; Luo, B. ; Kim, J. ; Mehandru, R. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.291-304,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
7.

Conference Proceedings
Conference Proceedings
7. Dielectic optical waveguide coupling analysis using two-dimensional finite difference in time-domain and frequency-domain simulations
Liou, L.L. ; Crespo, A. ; Sotirelis, P.
Pub. info.: Physics and Simulation of Optoelectronic Devices X.  pp.660-668,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4646