1.

Conference Proceedings
Conference Proceedings
1. TEMPERATURE DEPENDENCE OF THE KINETICS OF SILICON AMORPHIZATION BY He ION IMPLANTATION
Laanab, L. ; Roumili, A. ; Faye, M.M. ; Gessinn, N. ; Claverie, A.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.529-534,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
2.

Conference Proceedings
Conference Proceedings
2. TWO-DIMENSIONAL DAMAGE DISTRIBUTIONS INDUCED BY LOCALIZED ION IMPLANTATIONS
Faye, M.M. ; Laanab, L. ; Beauvillain, J. ; Claverie, A. ; Vieu, C. ; Benassayag, G.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.783-788,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
3.

Conference Proceedings
Conference Proceedings
3. Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon
Cowern, N.E.B. ; Mannino, G. ; Roozeboom, F. ; Stalk, P.A. ; Huizing, H.G.A. ; van Berkum, J.G.M ; Toan, N.N. ; Woerlee, P.H. ; Cristiano, F. ; Claverie, A.
Pub. info.: Advances in rapid thermal processing : proceedings of the symposium.  pp.125-132,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-10
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Conference Proceedings
Conference Proceedings
4. 9 Structure and thermal evolution of small clusters found after ultralow-energy high-dose boron implantation in Si
Hebras, X. ; Cristiano, F. ; Cherkash, N. ; Lerch, W. ; Paul, S. ; Pawlalr, B. ; Surdeano, R. ; Claverie, A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.67-82,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
5.

Conference Proceedings
Conference Proceedings
5. TEM AND HREM STUDIES OF AS-GROWN LOW-TEMPERATURE MOLECULAR BEAM EPITAXIAL In0.52Al0.48As/InP HETEROLAYERS
Claverie, A. ; Liliental-Weber, Z. ; Werner, P. ; Swider, W. ; Bhattacharya, P.K. ; Gupta, S. ; Mourou, G.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.289-294,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
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Conference Proceedings
Conference Proceedings
6. Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology
Ghyselen, B. ; Bogumilowicz, Y. ; Aulnette, C. ; Abbadie, A. ; Osternaud, B. ; Besson, P. ; Daval, N. ; Andrieu, F. ; Cayrefourq, I. ; Moriceau, H. ; Ernst, T. ; Tiberj, A. ; Rayssac, O. ; Blondeau, B. ; Mazure, C. ; Lagahe-Blanchard, C. ; Pocas, S. ; Cartier, A.-M. ; Hartmann, J.-M. ; Leduc, P. ; Nardo, C.Di ; Lugand, J.-F. ; Fournel, F. ; Semeria, M.-N. ; Kernevez, N. ; Campidelli, Y. ; Kermarrec, O. ; Morand, Y. ; Rivoire, M. ; Bensahel, D. ; Paillard, V. ; Vincent, L. ; Claverie, A. ; Boucaud, P.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.83-88,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
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Conference Proceedings
Conference Proceedings
7. ON THE AMORPHIZATION OF SILICON BY LIGHT ION IMPLANTATION: ION FLUX AND SUBSTRATE TEMPERATURE EFFECTS
Claverie, A. ; Roumili, A. ; Gessinn, N. ; Beauvillain, J.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.369-374,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
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Conference Proceedings
Conference Proceedings
8. THE EARLY STAGE OF SILICON OXIDATION BY RAPID THERMAL PROCESSING: INFLUENCE OF SEVERAL PARAMETERS ON THE GROWTH KINETICS
Yahia-Messaoud, A. ; Sarrabayrouse, G. ; Claverie, A. ; Martinez, A. ; Scheid, E. ; Campo, E. ; faye, M.
Pub. info.: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.391-396,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 224
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Conference Proceedings
Conference Proceedings
9. Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion
Cowern, N.E.B. ; Mannino, G. ; Roozeboom, F. ; van Berkum, J.G.M ; Colombeau, B. ; Claverie, A.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.61-72,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
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Conference Proceedings
Conference Proceedings
10. POINT DEFECT INJECTION IN SILICON DURING THIN OXIDE FORMATION
Skarlatos, D. ; Omri, M. ; Tsamis, C. ; Claverie, A. ; Tsoukalas, D.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.914-925,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
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Conference Proceedings
Conference Proceedings
11. 10 Relation between thermal evolution of interstitial defects and Transient Enhanced Diffusion in silicon
Claverie, A. ; Cristiano, F. ; Colombeau, B. ; Hebras, X. ; Calvo, P. ; Cherkoshin, N. ; Larnrani, Y. ; Scheid, E. ; de Mauduit, B. ; Lampin, E.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.73-82,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
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Conference Proceedings
Conference Proceedings
12. A CONTINUOUS HETEROGENEOUS MODEL FOR THE CRYSTALLINE TO AMORPHOUS TRANSITION IN ION IMPLANTED SEMICONDUCTORS:RELATIONSHIP TO THE “CRITICAL DAMAGE ENERGY DENSITY” MODEL
Vieu, C. ; Claverie, A. ; Faure, J. ; Beauvillain, J.
Pub. info.: Phase transformation kinetics in thin films : symposium held April 29-May 1, 1991, Anaheim, California, U.S.A..  pp.165-170,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 230
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Conference Proceedings
Conference Proceedings
13. A MODEL TO EXPLAIN THE VARIATIONS OF “END-OF-RANGE" DEFECT DENSITIES WITH ION IMPLANTATION PARAMETERS
Laanab, L. ; Bergaud, C. ; Faye, M.M. ; Faure, J. ; Martinez, A. ; Claverie, A.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.381-386,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
14.

Conference Proceedings
Conference Proceedings
14. Direct Wafer Bonding of Preamorphized Silicon Wafers
Laporte, A. ; Sarrabayrouse, G. ; Benamara, M. ; Claverie, A. ; Rocher, A. ; Lescouzeres, L. ; PeyreLavigne, A.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.869-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
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Conference Proceedings
Conference Proceedings
15. Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers
Benamara, M. ; Rocher, A. ; Laporte, A. ; Sarrabayrouse, G. ; Lescouzeres, L. ; PeyreLavigne, A. ; Fnaiech, M. ; Claverie, A.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.863-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
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Conference Proceedings
Conference Proceedings
16. Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion
Mannino, G. ; Cowern, N. E. B. ; Stolk, P. A. ; Roozeboom, F. ; Huizing, H. G. A. ; Berkum, J. G. M. van ; Boer, W. B. de ; Cristiano, F. ; Claverie, A. ; Jaraiz, M.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.163-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
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Conference Proceedings
Conference Proceedings
17. Relative Stability of Perfect and Faulted Dislocation Loops in Silicon
Omri, M. ; Mauduit, B. de ; Claverie, A.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.219-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
18.

Conference Proceedings
Conference Proceedings
18. Transient-Enhanced Diffusion of Dopants in Preamorphized Si Layers
Claverie, A. ; Bonafos, C. ; Omri, M. ; Mauduit, B. de ; Assayag, G. Ben ; Martinez, A. ; Alquier, D. ; Mathiot, D.
Pub. info.: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.3-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 438
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Conference Proceedings
Conference Proceedings
19. Estimation of the Number of Injected Interstitial Atoms During Nitrous Oxidation of Silicon
Skarlatos, D. ; Giles, L. F. ; Tsamis, C. ; Claverie, A. ; Tsoukalas, D.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.289-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
20.

Conference Proceedings
Conference Proceedings
20. Relation Between Structure and Carrier Lifetime in As-Implanted GaAs
Liliental-Weber, Z. ; Swider, W. ; Kagiichi, H. ; Claverie, A. ; Wang, H. H. ; Whitaker, J. F.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.677-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
21.

Conference Proceedings
Conference Proceedings
21. On the ｢紜symmetrical｢？Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D. ; Cowern, N. E. B. ; Pichler, P. ; Armand, C. ; Martinez, A. ; Mathiot, D. ; Omri, M. ; Claverie, A.
Pub. info.: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.67-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 532
22.

Conference Proceedings
Conference Proceedings
22. Boron TED in Pre-Amorphized Si: Role of the A/C Interface
Mathiot, D. ; Bonafos, C. ; Omri, M. ; Alquier, D. ; Martinez, A. ; Claverie, A.
Pub. info.: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.55-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 532
23.

Conference Proceedings
Conference Proceedings
23. Electrical Active Defects in the Band-Gap Induced by Ge-Pre-Amorphization of Si-Substrates
Boussaid, F. ; Olivie, F. ; Benzohra, M. ; Alquier, D. ; Claverie, A. ; Martinez, A.
Pub. info.: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.85-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 532
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Conference Proceedings
Conference Proceedings
24. Annealing Behavior Of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient
Tsamis, C. ; Skarlatos, D. ; Raptis, I. ; Tsoukalas, D. ; Calvo, P. ; Colombeau, B. ; Cristiano, F. ; Claverie, A.
Pub. info.: Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A..  pp.243-248,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 717
25.

Conference Proceedings
Conference Proceedings
25. Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
Colombeau, B. ; Smith, A.J. ; Cowern, N.E.B. ; Pawlak, B.J. ; Cristiano, F. ; Duffy, R. ; Claverie, A. ; Ortiz, C.J. ; Pichler, P. ; Lampin, E. ; Zechner, C.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.91-102,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
26.

Conference Proceedings
Conference Proceedings
26. On the 'Life' of {113} Defects
Cherkashin, N. ; Calvo, P. ; Cristiano, F. ; Mauduit, B.de ; Claverie, A.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.103-108,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
27.

Conference Proceedings
Conference Proceedings
27. Atomistic Simulations of Extrinsic Defects Evolution and Transient Enhanced Diffusion in Silicon
Claverie, A. ; Colombeau, B. ; Cristiano, F. ; Altibelli, A. ; Bonafos, C.
Pub. info.: Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 669
28.

Conference Proceedings
Conference Proceedings
28. Transient-Enhanced Diffusion of Dopants in Preamorphized Si Layers
Claverie, A. ; Bonafos, C. ; Omri, M. ; Mauduit, B. de ; Assayag, G. Ben ; Martinez, A. ; Alquier, D. ; Mathiot, D.
Pub. info.: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.11-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 439
29.

Conference Proceedings
Conference Proceedings
29. Atomistic Simulations of the Ostwald Ripening of Si Nanoparticles Ion Beam Synthesized in Sio2
Bonafos, C. ; Carrada, M. ; Colombeau, B. ; Altibelli, A. ; Assayag, G. Ben ; Garrido, B. ; Lopez M. ; Perez-Rodriguez, A. ; Morante, J.R. ; Claverie, A.
Pub. info.: Ion beam synthesis and processing of advanced materials : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 647
30.

Conference Proceedings
Conference Proceedings
30. Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers
Coffin, H. ; Bonafos, C. ; Schamm, S. ; Cherkashin, N. ; Respaud, M. ; Ben-Assayag, G. ; Dimitrakis, P. ; Normand, P. ; Tence, M. ; Colliex, C. ; Claverie, A.
Pub. info.: Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A..  pp.281-286,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 830
31.

Conference Proceedings
Conference Proceedings
31. Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions
Cowern, N. E. B. ; Colombeau, B. ; Lampin, E. ; Cristiano, F. ; Claverie, A. ; Lamrani, Y. ; Duffy, R. ; Venezia, V. ; Heringa, A. ; Wang, C. C. ; Zechner, C.
Pub. info.: CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.199-204,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 765
32.

Conference Proceedings
Conference Proceedings
32. Manipulation of 2D Arrays of Si Nanocrystals by Ultra Low Energy Ion Beam Synthesis for non volatile memories applications
Bonafos, C. ; Cherkashin, N. ; Carrada, M. ; Coffin, H. ; Assayag, G. Ben ; Schamm, S. ; Dimitrakis, P. ; Normand, P. ; Perego, M. ; Fanciulli, M. ; Muller, T. ; Heinig, K. H. ; Argawal, A. ; Claverie, A.
Pub. info.: Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A..  pp.217-222,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 830
33.

Conference Proceedings
Conference Proceedings
33. Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range Defects
Colombeau, B. ; Cristiano, F. ; Marrot, J.-C. ; Assayag, G. Ben ; Claverie, A.
Pub. info.: Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 669
34.

Conference Proceedings
Conference Proceedings
34. Ge Nanocrystals in MOS-Memory Structures Produced by Molecular-Beam Epitaxy and Rapid-Thermal Processing
Larsen, A. Nylandsted ; Kanjilal, A. ; Hansen, J. Lundsgaard ; Gaiduk, P. ; Normand, P. ; Dimitrakis, P. ; Tsoukalas, D. ; Cherkashin, N. ; Claverie, A.
Pub. info.: Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A..  pp.263-268,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 830
35.

Conference Proceedings
Conference Proceedings
35. Multi-Dot Floating-Gates In MOSFETs for Nonvolatile Memories -Their Ion Beam Synthesis and Morphology
Muller, T. ; Heinig, K.-H. ; Bonafos, C. ; Coffin, H. ; Cherkashin, N. ; Assayag, G. Ben ; Schamm, S. ; Zanchi, G. ; Claverie, A. ; Tence, M. ; Colliex, C.
Pub. info.: Radiation effects and ion-beam processing of materials : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.333-338,  2004.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 792
36.

Conference Proceedings
Conference Proceedings
36. Misoriention-Induced Defects at Bonded Si-Si Bonding Interfaces: Structural and Electrical Investigations
Laprote, A. ; Sarrabayrouse, G. ; Rocher, A. ; Lescouzeres, L. ; PeyreLavigne, A. ; Claverie, A.
Pub. info.: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding : physics and applications.  pp.342-352,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-7