High Quality AIN and GaN of Si(III) by MBE with Ammonia

High Quality AIN and GaN of Si(III) by MBE with Ammonia

Author(s):

Publication title:

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-17

Pub. Year:

1999

Page(from):

238

Page(to):

242

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772402 [1566772400]

Language:

English

Call no.:

E23400/99-17

Type:

Conference Proceedings

Details

TDL ID:	ZA00013946
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Joint International Meeting of the Electrochemical Society and the Electrochemical Society of Japan
Conf. info. (Number):	31st ; 1999
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1999.10.17-1999.10.22

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