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22 results

Conference Proceedings

1. *OPTICAL, VIGRATIONAL AND SURFACE PROPERTIES OF SiC

Choyke, W. J.

Pub. info.:	Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.207-220, 1987. Pittsburgh, Penn.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	97

Conference Proceedings

2. Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects

Gali, A. ; Hornos, T. ; Deak, P. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.519-522, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. AMORPHIZATION AND ANNEALING OF 6H SiC IMPLANTED WITH N-TYPE, P-TYPE OR ISOVALENT DOPANTS

Spitznagel, J. A. ; Wood. Susan ; Choyke, W. J. ; Devaty, R. P. ; Ruan, J.

Pub. info.:	Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.. pp.113-118, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	147

Conference Proceedings

4. DEFECT FORMATION AND HYDROGEN TRAPPING IN H+ IMPLANTED FZ SILICON

Choyke, W. J. ; Spitznagel, J. A. ; Doyle, N. J. ; Wood, S. ; Irwin, R. B.

Pub. info.:	Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.. pp.187-192, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	36

Conference Proceedings

5. STUDY OF DIFFUSION LENGTH AND ALLOY SEGREGATION IN MOCVD AlGaAs

Bradshaw, J. L. ; Choyke, W. J. ; Feng, Z. C. ; Meier, D. L. ; Messham, R. L.

Pub. info.:	Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.. pp.595-600, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	102

Conference Proceedings

6. COMBINED OPTICAL, STRUCTURAL AND THEORETICAL ASSEMENT OF MOCVD GROWN MULTIPLE GaAs QUANTUM WELLS

Feng, Z. C. ; Cen, J. ; Bajaj, K. K. ; Messham, R. L. ; Clemen, L. L. ; Yoganathan, M. ; Choyke, W. J.

Pub. info.:	Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.. pp.359-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	326

Conference Proceedings

7. 1.54 ｦﾌm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC

Yoganathan, M. ; Choyke, W. J. ; Devaty, R. P. ; Pensl, G. ; Edmond, J. A.

Pub. info.:	Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.339-, 1996. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	422

Conference Proceedings

8. A COMPARATIVE STUDY OF NEAR-SURFACE EFFECTS DUE TO VERY HIGH FLUENCE H+ IMPLANTATION IN SINGL ECRYSTAL FZ, CZ AND WEB Si

Choyke, W. J. ; Irwin, R. B. ; McCruerr, J. N. ; Townsend, J. R. ; Doyle, N. J. ; Hall, B. O. ; Spitznagel, J. A. ; Wood, S.

Pub. info.:	Ion implantation and ion beam processing of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.359-364, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	27

Conference Proceedings

9. Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation

Rutsch, G. ; Devaty, R. P. ; Choyke, W. J. ; Langer, D. W. ; Rowland, L. B. ; Niemann, E. ; Wischmeyer, F.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.733-736, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

10.

Conference Proceedings

10. Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC

Bardeleben, H. J. von ; Cantin, J. L. ; Vickridge, I. ; Song, Y. ; Dhar, S. ; Feldman, L. C. ; Williams, J. R. ; Ke, L. ; Shishkin, Y. ; Devaty, R. P. ; Choyke, W. J.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.277-282, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

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