1.

Conference Proceedings
Conference Proceedings
1. Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
Zhu, L. ; Losee, P.A. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Vispute, R.D. ; Venkatesan, T. ; Agarwal, A.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1367-1370,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
Zhu, L. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Agarwal, A.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1159-1162,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier
Zhu, L. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1401-1404,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
Zhu, L. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1231-1234,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
Stahlbush, R.E. ; Twigg, M.E. ; Irvine, K.G. ; Sumakeris, J.J. ; Chow, T.P. ; Losee, P.A. ; Zhu, L. ; Tang, Y. ; Wang, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.533-536,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. 1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
Zhu, L. ; Shanbhag, M. ; Chow, T.P. ; Jones, K.A. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Vispute, R.D. ; Venkatesan, T. ; Agarwal, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.843-846,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
Zhu, L. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1231-1234,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393