ION ENERGY AND DOSE EFFECTS DURING ION-ASSITED EPITAXIAL GROWTH OF InAs ON Si (100)

ION ENERGY AND DOSE EFFECTS DURING ION-ASSITED EPITAXIAL GROWTH OF InAs ON Si (100)

Author(s):

Publication title:

Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

128

Pub. Year:

1989

Page(from):

689

Page(to):

694

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990012 [1558990011]

Language:

English

Call no.:

M23500/128

Type:

Conference Proceedings

Details

TDL ID:	ZA00015613
Series ID:	PA00000011
Conf. info. (Name):	Symposium on processing and characterization of materials using ion beams
Conf. info. (Number):	1988
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1988.11.28-1988.12.02

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