1.

Conference Proceedings
Conference Proceedings
1. Applicability of RTCVD and LPCVD nitride spacers for sub-0.18-ｦﾌm CMOS technologies
Shiau,W.-T. ; Hu,J.C. ; Rodder,M. ; Tiner,P. ; Chen,I.-C.
Pub. info.: Microelectronic Device Technology : 1-2 October 1997, Austin, Texas.  pp.283-294,  1997.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3212
2.

Conference Proceedings
Conference Proceedings
2. Tuned MEDICI simulator including inverse short channel effect for sub-0.18-ｦﾌm CMOS technologies
Nandakumar,M. ; Sridhar,S. ; Vasanth,K. ; Hu,J.C. ; Shiau,W.-T. ; Mei,P. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic Device Technology : 1-2 October 1997, Austin, Texas.  pp.312-323,  1997.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3212
3.

Conference Proceedings
Conference Proceedings
3. Prediction of CMOS transistor performance at 0.10-ｦﾌm gate length using tuned simulations
Sridhar,S. ; Mehrotra,M. ; Rodder,M. ; Nandakumar,M. ; Chen,I.-C.
Pub. info.: Microelectronic Device Technology : 1-2 October 1997, Austin, Texas.  pp.208-219,  1997.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3212
4.

Conference Proceedings
Conference Proceedings
4. Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-ｦﾌm CMOS technologies
Hu,J.C. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic Device Technology : 1-2 October 1997, Austin, Texas.  pp.136-146,  1997.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3212
5.

Conference Proceedings
Conference Proceedings
5. Feasibility study to determine the suitability of using TiN/W and Si1-xGex as alternative gate materials for sub-0.1-ｦﾌm gate-length PMOS devices
Murtaza,S.S. ; Hu,J.C. ; Unnikrishnan,S. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.49-55,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
6.

Conference Proceedings
Conference Proceedings
6. Prediction of deep submicron MOS transistor performance and comparison with projected performance trends using tuned simulations
Sridhar,S. ; Chao,C.-P. ; Mehrotra,M. ; Nandakumar,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.234-242,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
7.

Conference Proceedings
Conference Proceedings
7. New methodology of simulating pocket-implanted sub-0.18-ｦﾌm CMOS
Mehrotra,M. ; Hu,J.C. ; Nandakumar,M. ; Chattenee,A. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.272-280,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
8.

Conference Proceedings
Conference Proceedings
8. Optimum junction depth design of the S/D extension regions (MDD) for sub-0.18-ｦﾌm CMOS technologies
Chao,C.-P. ; Mehrotra,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.281-292,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
9.

Conference Proceedings
Conference Proceedings
9. Evaluation of Mo-doped Ti salicide process for sub-0.18-ｦﾌm CMOS
Chao,C.-P. ; Kittl,J.A. ; Hong,Q.-Z. ; Shiau,W.-T. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.120-130,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
10.

Conference Proceedings
Conference Proceedings
10. Source/drain formation using cobalt silicide as diffusion source for deep submicron nMOS
Hu,J.C. ; Hong,Q.-Z. ; Kittl,J.A. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.103-111,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
11.

Conference Proceedings
Conference Proceedings
11. Shallow p-type source/drain extension formation using B2H6 plasma doping for deep submicron CMOS
Hu,J.C. ; Kraft,R. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.82-90,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3506
12.

Conference Proceedings
Conference Proceedings
12. Pass transistor and isolation design methodology and its implementation for improved manufacturability for 256-Mbit DRAM and beyond
Chatterjee,A. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic Device and Multilevel Interconnection Technology II.  pp.244-248,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2875
13.

Conference Proceedings
Conference Proceedings
13. Scalability of conventional and sidewall-sealed LOCOS technology for 256-Mbit DRAM array and periphery isolation
Rodder,M. ; Hwang,J.M. ; Chen,I.-C.
Pub. info.: Microelectronic Device and Multilevel Interconnection Technology II.  pp.236-243,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2875
14.

Conference Proceedings
Conference Proceedings
14. Improved figure-of-merit metric for CMOS transistor performance and its application to 0.25-ｦﾌm CMOS Technologies
Chatterjee,A. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic Device and Multilevel Interconnection Technology.  pp.115-123,  1995.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2636
15.

Conference Proceedings
Conference Proceedings
15. Prediction of 0.18-ｦﾌm CMOS technology performance using tuned device simulation
Nandakumar,M. ; Rodder,M. ; Chen,I.-C.
Pub. info.: Microelectronic Device and Multilevel Interconnection Technology.  pp.100-107,  1995.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2636