GaN Growth by Nitrogen ECR-CVD Method
- Author(s):
Chen, K. H. Chao, C. H. Chuang, T. J. Yang, Y. J. Chen, L. C. Chen, C. K. Huang, Y. F. Yang, C. H. Lin, H. Y. Chang, I. M. Chen, Y. F. - Publication title:
- III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 423
- Pub. Year:
- 1996
- Page(from):
- 377
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993266 [1558993266]
- Language:
- English
- Call no.:
- M23500/423
- Type:
- Conference Proceedings
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