1.

Conference Proceedings
Conference Proceedings
1. Analysis of Junctions Formed in Strained Si/SiGe Substrates
Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.187-192,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.273-280,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
4.

Conference Proceedings
Conference Proceedings
4. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
5.

Conference Proceedings
Conference Proceedings
5. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.415-422,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
6.

Conference Proceedings
Conference Proceedings
6. P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Simons, V. ; Loo, R. ; Caymax, M. ; De Meyer, K. ; Vandervorst, W. ; Claeys, C.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.338-348,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
7.

Conference Proceedings
Conference Proceedings
7. (11.1) 3:10 - 3:40 PM - Strained Silicon on Relaxed SiGe Made by Ion Implantation and Strain Transfer (Invited)
Mantl, S. ; Buca, D. M. ; Hollander, B. ; Morschbacher, M. ; Trinkaus, H. ; Luysberg, M. ; Hueging, N. ; Carius, L. Houben'R. ; Loo, R. ; Caymax, M. ; Schafer, H. (ISG1-IT)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.731-740,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
8.

Conference Proceedings
Conference Proceedings
8. (19.2) 1:30 - 1:50 PM - Maximization of Active As Doping in (selective) Epitaxial Si and SiGe Layers
Loo, R. ; Bajolet, P. ; Maes, J.W. ; Bauer, M. ; Caymax, M. ; Arena, C. (MEC)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.1123-1134,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
9.

Conference Proceedings
Conference Proceedings
9. N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Ries, M. ; Loo, R. ; Caymax, M. ; Vandervorst, W. ; De Meyer, K.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.119-124,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864
10.

Conference Proceedings
Conference Proceedings
10. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Loo, R. ; Delhougne, R. ; Meunier-Beillard, P. ; Caymax, M. ; Verheyen, P. ; Eneman, G. ; Wolf, I.De ; Janssens, T. ; Benedetti, A. ; Meyer, K.De ; Vandervorst, W. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.3-14,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809