1.

Conference Proceedings
Conference Proceedings
1. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD [5941-28]
Grandusky, J. R. ; Jamil, M. ; Jindal, V. ; DeLuca, J. A. ; LeBoeuf, S. F. ; Cao, X. A. ; Arthur, S. D. ; Shahedipouir-Sandvik, F
Pub. info.: Fifth international conference on solid state lighting : 1-4 August 2005, San Diego, California, USA.  pp.59410W-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5941
2.

Conference Proceedings
Conference Proceedings
2. Behavior of W and WSix Contact Metallization on n- and P-Type GaN
Cao, X. A. ; Ren, F. ; Lothian, J. R. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Cole, M. W. ; Zeitouny, A. ; Eizenberg, M. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.39.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. Processing and device performance of GaN power rectifiers
Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.67.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
6.

Conference Proceedings
Conference Proceedings
6. Activation characteristics of donor and acceptor implants in GaN
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Wilson, R. G. ; Sekhar, J. A. ; Zolper, J. C. ; Han, J. ; Rieger, D. J. ; Shul, R. J. ; Guo, H. J. ; Pennycook, S. J. ; Zavada, J. M.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.513-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
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Conference Proceedings
Conference Proceedings
7. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
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Conference Proceedings
Conference Proceedings
8. Repid Thermal Processing of Implanted GaN Up to 1500°C
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Abernathy, C. R. ; Han, J. ; Shul, R. J. ; Rieger, D. J. ; Zolper, J. C. ; Wilson, R. G. ; Fu, M. ; Sekhar, J. A. ; Guo, H. J. ; Pennycook, S. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
9.

Conference Proceedings
Conference Proceedings
9. Surface conversion effects in plasma-damaged p-GaN
Cao, X. A. ; Pearton, S. J. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Shul, R. J. ; Zhang, L. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
10.

Conference Proceedings
Conference Proceedings
10. Temperature Dependent Performance of GaN Schottky Diode Rectifiers
Cao, X. A. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Pearton, S. J. ; Lee, C. -M. ; Chuo, C. -C. ; Chyi, J. -I. ; Chi, G. C. ; Han, J. ; Chu, S. N. G. ; Wilson, R. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1631-1634,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
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Conference Proceedings
Conference Proceedings
11. Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Cao, X. A. ; LeBoeuf, S. F. ; Garrett, J. L. ; Ebong, A. ; Rowland, L. B. ; Arthur, S. D.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.349-354,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
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Conference Proceedings
Conference Proceedings
12. Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes
Cao, X. A. ; Teetsov, J. M. ; LeBoeuf, S. F. ; Arthur, S. D. ; Kretchmer, J.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.581-586,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831