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12 results

Conference Proceedings

1. Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers

Blanque, S. ; Perez, R. ; Mestres, N. ; Contreras, S. ; Camassel, J. ; Godignon, P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.795-798, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates

Blanc, C. ; Zielinski, M. ; Souliere, V. ; Sartel, C. ; Juillaguet, S. ; Contreras, S. ; Camassel, J. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.117-120, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS

Aboughe-Nze, P. ; Planes, N. ; Ravetz, M. ; Fraisse, B. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Monteil, Y. ; Rushworth, S. ; Camassel, J.

Pub. info.:	Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia. pp.92-99, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-35

Conference Proceedings

4. Al and Al/C High Dose Implantation in 4H-SiC

Bluet, J. M. ; Pernot, J. ; Billon, T. ; Contreras, S. ; Michaud, J. F. ; Robert, J. L. ; Camassel, J.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.885-888, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

5. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation

Blanque, S. ; Lyonnet, J. ; Camassel, J. ; Perez, R. ; Terziyska, P. ; Contreras, S. ; Godignon, P. ; Mestres, N. ; Pascual, J.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.645-648, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. Characterization of 3C-SiC/SOI Deposited with HMDS

Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.599-602, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. Electrical Properties of p-Type In Situ Doped vs. Al-Implanted 4H-SiC

Pernot, J. ; Contreras, S. ; Camassel, J. ; Robert, J. L.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.401-404, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1435-1438, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.343-346, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks

Pernot, J. ; Camassel, J. ; Peyre, H. ; Contreras, S. ; Robert, J.L.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.403-406, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

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