Interstitial Oxygen Concentration Role in the DW-LOCOS CMOS Technology

Interstitial Oxygen Concentration Role in the DW-LOCOS CMOS Technology

Author(s):

Bellutti, P.

Publication title:

Proceedings of the Fourth International Symposium on High Purity Silicon

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-13

Pub. Year:

1996

Page(from):

338

Page(to):

344

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771566 [1566771560]

Language:

English

Call no.:

E23400/963433

Type:

Conference Proceedings

Details

TDL ID:	ZA00013846
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
Conf. info. (Number):	4th ; 190h
Conf. info. (Venue):	San Antonio, Texas, USA
Conf. info. (Date):	1996.10.06-1996.10.11

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