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18 results

Conference Proceedings

1. DEPENDENCE ON MOVCD GROWTH TEMPERATURE OF THE PHOTOLUMINESCENCE PROPERTIES OF ZnSe, ZnTe,AND ZnSe(1-X)Te(X) ALLOYS AND ZnSe/ZnTe SUPERLATTICES

Ponga, B. E. ; Calas, J. ; Averous, M ; Cloitte, T. ; Briot, O. ; Gil, B. ; Aulombard, R. L.

Pub. info.:	Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.. pp.371-376, 1992. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	263

Conference Proceedings

2. EXPLANATION OF OBSERVED P-TYPED CONDUCTIVITY IN MOVPE ZnSe/GaAs HETEROSTRUCTURES

Briot, O. ; Cloitre, T. ; Tempier, N. ; Sauvezon, R. ; Averous, M. ; Aulombard, R. L.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.415-420, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

3. Strain Effects in GaN on Sapphire: Towards a Quantitative Comprehension

Briot, O. ; Alexis, J. P. ; Gil, B. ; Aulombard, R. L.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.411-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

4. Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters

Vaillant, Y-M. Le ; Clur, S. ; Andenet, A. ; Briot, O. ; Gil, B. ; Aulombard, R. L. ; Bisaro, R. ; Olivier, J. ; Durand, O. ; Duboz, J-Y.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.173-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

5. Growth Kinetics and Structural Quality in GaN Epitaxy by Low Pressure MOVPE

Briot, O. ; Alexis, J. P. ; Gil, B. ; Aulombard, R. L.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.207-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

6. Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction

Andenet, A. ; Gil, B. ; Vaillant, Y-M. Le ; Clur, S. ; Briot, O. ; Aulombard, R. L.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.243-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

7. Radiative and Nonradiative Relaxation of Excitons in GaN

Goldner, A. ; Eckey, L. ; Hoffmann, A. ; Broser, I. ; Alemu, A. ; Gil, B. ; Ruffenach-Clur, S. ; Aulombard, R. L. ; Briot, O.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.637-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

8. OPTICAL PROPERTIES OF LIGHT-HOLE EXCITONS IN MOVPE GROWN (Ga,In)As-GaAs QUANTAM WELLS

Bigenwald, P. ; Laire, O. ; Zhang, X. ; Briot, O. ; Gil, B. ; Cloitre, T. ; Aulombard, R. L.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.321-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

Conference Proceedings

9. PLASMA ASSISTED NITROGEN DOPING OF ZnSe GROWN BY MOVPE

Cloitre, T. ; Briot, O. ; Briot, N. ; Gil, B. ; Aulombard, R. L.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.463-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

10.

Conference Proceedings

10. High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications

Moret, M. ; Ruffenach, S. ; Briot, O. ; Gil, B. ; Aulombard, R. L.

Pub. info.:	New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.. pp.233-238, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	764

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