1.

Conference Proceedings
Conference Proceedings
1. Reduced Pressure-Chemical Vapor Deposition of Ge Thick Layers on Si(001) for Microelectronics and Optoelectronics Purposes
Hartmann, J.M. ; Papon, A.M. ; Holliger, P. ; Rolland, G. ; Billon, T. ; Rouviere, M. ; Vivien, L. ; Laval, S.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.147-152,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. Reduced Pressure-Chemical Vapor Deposition of High Ge Content (20%-55%) SiGe Virtual Substrates
Bogumilowicz, Y. ; Hartmann, J.M. ; Laugier, F. ; Rolland, G. ; Billon, T. ; Renard, V. ; Olshanetsky, E.B. ; Estibals, O. ; Kvon, Z.D. ; Portal, J.C.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.45-50,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Di Cioccio, L. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Advances in SiC Materials and Technology for Schottky Diode Applications
Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1119-1124,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Pernot, E. ; Neyret, E. ; Moulin, C. ; Pernot-Rejmankova, P. ; Templier, F. ; Cioccio, L.Di. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.419-422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Properties of Transmission Lines on Various SiC Substrates
Royet, A. S. ; Cabon, B. ; Ouisse, T. ; Billon, T.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1267-1270,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. LPCVD synthesis of silicon nanodots from silane and for flash memory devices
Cocheteau, V. ; Caussat, B. ; Mur, P. ; Scheid, E. ; Donnadieu, P. ; Billon, T.
Pub. info.: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.523-530,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-09
8.

Conference Proceedings
Conference Proceedings
8. Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
Hugonnard-Bruyere, E. ; Letertre, F. ; Cioccio, L. Di ; Bardeleben, H. J. von ; Cantin, J. L. ; Ouisse, T. ; Billon, T. ; Guillot, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.715-718,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
9.

Conference Proceedings
Conference Proceedings
9. Al and Al/C High Dose Implantation in 4H-SiC
Bluet, J. M. ; Pernot, J. ; Billon, T. ; Contreras, S. ; Michaud, J. F. ; Robert, J. L. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.885-888,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
10.

Conference Proceedings
Conference Proceedings
10. SiC In Situ Pre-Growth Etching: A Thermodynamic Study
Neyret, E. ; Cioccio, L. Di ; Blanquet, E. ; Raffy, C. ; Pudda, C. ; Billon, T. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1041-1044,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
11.

Conference Proceedings
Conference Proceedings
11. DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown
Torres, A. ; Flament, O. ; Musseau, O. ; Billon, T.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1215-1218,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
12.

Conference Proceedings
Conference Proceedings
12. Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Meziere, J. ; Ferret, P. ; Blanquet, E. ; Pons, M. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.731-734,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
13.

Conference Proceedings
Conference Proceedings
13. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
Pons, M. ; Meziere, J. ; Wang Tang Kuan, S. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.223-226,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. SiC Power Devices on QUASIC and SiCOI Smart-CutR Substrates: First Demonstrations
Letertre, F. ; Daval, N. ; Templier, F. ; Bano, E. ; Planson, D. ; Di Cioccio, L. ; Jalaguier, E. ; Bluet, J.M. ; Billon, T. ; Madar, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.813-818,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
15.

Conference Proceedings
Conference Proceedings
15. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. QuaSiC Smart-Cut Substrates for SiC High Power Devices
Letertre, F. ; Jalaguier, E. ; Di Cioccio, L. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.151-154,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. QuaSiC Smart-Cut Substrates for SiC High Power Devices
Letertre, F. ; Jalaguier, E. ; Cioccio, L. D. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.151-154,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Advances in SiC Materials and Technology for Schottky Diode Applications
Cioccio, L. Di. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1119-1124,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
19.

Conference Proceedings
Conference Proceedings
19. Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
Terziyska, P. ; Pernot, J. ; Contreras, S. ; Robert, J.L. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.399-402,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
20.

Conference Proceedings
Conference Proceedings
20. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
Pons, M. ; Meziere, J. ; Wan.Tang.Kuan,S ; Blanquet, E. ; Ferret, P. ; Cioccio, L. Di. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.223-226,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
Meziere, J. ; Pons, M. ; Dedulle, J.-M. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.141-144,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
22.

Conference Proceedings
Conference Proceedings
22. SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
Moulin, C. ; Pons, M. ; Pisch, A. ; Grosse, P. ; Faure, C. ; Basset, A. ; Basset, G. ; Passero, A. ; Billon, T. ; Pelissier, B. ; Anikin, M. ; Pernot, E. ; Pernot-Rejmankova, P. ; Madar, R.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.7-10,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
23.

Conference Proceedings
Conference Proceedings
23. Progress in 4H-SiC Bulk Growth
Anikin, M. ; Pernot, E. ; Pelissier, B. ; Pons, M. ; Pisch, A. ; Bernard, C. ; Billon, T. ; Faure, C. ; Moulin, C. ; Madar, R.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.21-24,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
24.

Conference Proceedings
Conference Proceedings
24. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Cioccio, L. Di. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements
Ekoue, A. ; Renault, O. ; Billon, T. ; Di Cioccio, L. ; Guillot, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.555-558,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
27.

Conference Proceedings
Conference Proceedings
27. Cubic SiC Surface Structure Studied by X-Ray Diffraction
D'Angelo, M. ; Enriquez, H. ; Aristov, V.Yu. ; Soukiassian, P. ; Renaud, G. ; Barbier, A. ; Chiang, S. ; Semond, F. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.571-574,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
28.

Conference Proceedings
Conference Proceedings
28. Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Pernot, E. ; Neyret, E. ; Moulin, C. ; Pernot-Rejmankova, P. ; Templier, F. ; Di Cioccio, L. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.419-422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
Ferret, P. ; Leray, A. ; Feuillet, G. ; Lyan, P. ; Pudda, C. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.201-204,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436