1.

Conference Proceedings
Conference Proceedings
1. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Di Cioccio, L. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Advances in SiC Materials and Technology for Schottky Diode Applications
Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1119-1124,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Meziere, J. ; Ferret, P. ; Blanquet, E. ; Pons, M. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.731-734,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
Pons, M. ; Meziere, J. ; Wang Tang Kuan, S. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.223-226,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. SiC Power Devices on QUASIC and SiCOI Smart-CutR Substrates: First Demonstrations
Letertre, F. ; Daval, N. ; Templier, F. ; Bano, E. ; Planson, D. ; Di Cioccio, L. ; Jalaguier, E. ; Bluet, J.M. ; Billon, T. ; Madar, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.813-818,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
6.

Conference Proceedings
Conference Proceedings
6. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. QuaSiC Smart-Cut Substrates for SiC High Power Devices
Letertre, F. ; Jalaguier, E. ; Di Cioccio, L. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.151-154,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
Terziyska, P. ; Pernot, J. ; Contreras, S. ; Robert, J.L. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.399-402,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
Meziere, J. ; Pons, M. ; Dedulle, J.-M. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.141-144,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393