1.

Conference Proceedings
Conference Proceedings
1. LPE of Silicon Carbide Using Diluted Si-Ge Flux
Filip, O. ; Epelbaum, B. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.133-136,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.71-74,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Kadinski, L. ; Muller, S. G. ; Selder, M. ; Wellmann, P. J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.39-42,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
Hofmann, D. ; Bickermann, M. ; Hartung, W. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.445-448,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
6.

Conference Proceedings
Conference Proceedings
6. Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
Epelbaum, B.M. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.983-986,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
Bickermann, M. ; Epelbaum, B.M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1541-1544,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
Herro, Z.G. ; Bickermann, M. ; Epelbaum, B.M. ; Weingaertner, R. ; Kuenecke, U. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.719-722,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
12.

Conference Proceedings
Conference Proceedings
12. Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
Epelbaum, B.M. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1537-1540,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
13.

Conference Proceedings
Conference Proceedings
13. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
Bickermann, M. ; Irmscher, K. ; Epelbaum, B.M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.787-790,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
15.

Conference Proceedings
Conference Proceedings
15. On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging
Wellmann, P. J. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.259-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
16.

Conference Proceedings
Conference Proceedings
16. Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Bickermann, M. ; Weingartner, R. ; Herro, Z. ; Hofmann, D. ; Kunecke, U. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.337-340,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
17.

Conference Proceedings
Conference Proceedings
17. Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
Weingartner, R. ; Bickermann, M. ; Herro, Z. ; Kunecke, U. ; Sakwe, S.A. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.333-336,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
18.

Conference Proceedings
Conference Proceedings
18. Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Herro, Z. ; Bickermann, M. ; Epelbaum, B.M. ; Masri, P. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.67-70,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
19.

Conference Proceedings
Conference Proceedings
19. Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
Epelbaum, B.M. ; Gurzhiyants, P.A. ; Herro, Z. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.119-122,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
Herro, Z.G. ; Epelbaum, B.M. ; Bickermann, M. ; Masri, P. ; Seitz, C. ; Magerl, A. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.111-114,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
21.

Conference Proceedings
Conference Proceedings
21. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Stability Criteria for 4H-SiC Bulk Growth
Straubinger, T.L. ; Bickermann, M. ; Hofmann, D. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.25-28,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
23.

Conference Proceedings
Conference Proceedings
23. Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.49-52,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
24.

Conference Proceedings
Conference Proceedings
24. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
Herro, Z.G. ; Epelbaum, B.M. ; Bickermann, M. ; Masri, P. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.95-98,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
28.

Conference Proceedings
Conference Proceedings
28. Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.51-54,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
29.

Conference Proceedings
Conference Proceedings
29. PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
Rasp, M. ; Straubinger, T.L. ; Schmitt, E. ; Bickermann, M. ; Reshanov, S. ; Sadowski, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.55-58,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436