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Gate-Length-and threshold-voltage-dependent nonlinearity in the hot carrier DC Lifetime extrapolation for sub-100-nm NMOS devices

Author(s):
Chheda,S.N. ( Motorola )
Bhat,N.
Tsui,P.
Gonzales,S.
Cave,N.
Fu,C.-C.
Huang,F.
Nangia,A.
Choi,P.S.-J.
Collins,S.
5 more
Publication title:
Microelectronic Device Technology III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3881
Pub. Year:
1999
Page(from):
175
Page(to):
185
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819434784 [0819434787]
Language:
English
Call no.:
P63600/3881
Type:
Conference Proceedings

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