1.

Conference Proceedings
Conference Proceedings
1. Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Thuaire, A. ; Henry, A. ; Magnusson, B. ; Bergman, J.P. ; Chen, W.M. ; Janzen, E. ; Mermoux, M. ; Bano, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.461-464,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. INTRINSIC LUMINESCENCE OF GaAs/A1GaAs HETEROJUNCTIONS INA TRANSVERSE ELECTRIC FIELD
Zhao, Q.X. ; Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Hallin, C. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.337-342,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. DECAY MEASUREMENTS OF FRE AND BOUND EXCITON RECOMBINATION IN DOPED GaAs/GaA1As QUANTUM WELLS
Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.325-330,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
4.

Conference Proceedings
Conference Proceedings
4. TIME RESOLVED MEASUREMENTS OF RADIATIVE RECOMBINATION IN GaAs/A1GaAs HETEROSTRUCTURES
Bergman, J.P. ; Zhao, Q.X. ; Holtz, P.-O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.703-706,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
5.

Conference Proceedings
Conference Proceedings
5. Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
ul Hassan, J. ; Hallin, C. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.183-186,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Optical Properties of Some GaAs-Based Quantum Structures with Excess Carriers
Holtz, P.O ; Wongmnerod, S. ; Sernelius, B. ; Pozina, G. ; Bergman, J.P. ; Madsen, L.D. ; McCaffrey, J.P. ; Reginski, K. ; bugajski, M. ; Godlewski, M. ; thordson, J. ; Andersson, T.G.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.145-156,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
8.

Conference Proceedings
Conference Proceedings
8. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.423-426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Lendenmann, H. ; Dahlquist, F. ; Johansson, N. ; Soederholm, R. ; Nilsson, P.A. ; Bergman, J.P. ; Skytt, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.727-730,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393