1.

Conference Proceedings
Conference Proceedings
1. The Ammonia- MBE Approach for High Electron Mobility in GaN Epilayers And AlGaN/GaN HFET *
Tang, H. ; Webb, J.B. ; Bardwell, J.A.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.19-36,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
2.

Conference Proceedings
Conference Proceedings
2. Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy
Tang, H. ; Bardwell, J.A. ; Webb, J.B. ; Rolfe, S. ; Moisa, S. ; Sproule, I. ; Raymond, S.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.201-211,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
3.

Conference Proceedings
Conference Proceedings
3. The Mechanism of Photoenhanced Wet Etching of GaN
Bardwell, J.A. ; Webb, J.B. ; Tang, H. ; Fraser, J. ; Moisa, S.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.193-203,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
4.

Conference Proceedings
Conference Proceedings
4. Growth and characterization of room temperature anodic Si02 films
Bardwell, J.A. ; Clark, K.B. ; Mitchell, D.F. ; Bisaillion, D.A. ; Sproule, G.I. ; MacDougall, B. ; Graham, M.J.
Pub. info.: Proceedings of the Second International Symposium on Electrochemical Technology Applications in Electronics.  pp.303-312,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-20
5.

Conference Proceedings
Conference Proceedings
5. Physical And Electrical Characteristics Of Thin Anodic Oxides On Si(100)
Bardwell, J.A. ; Landheer, D. ; Schmuki, P.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.414-424,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
6.

Conference Proceedings
Conference Proceedings
6. Growth of Anodic Oxides on Si(100) in 0.1M HCl: Influence of the Initial Electrochemical Potential on the Growth Mechanism and Properties of the Oxide
Bardwell, J.A. ; Allegretto, E.M. ; Phillips, J. ; Buchanan, M. ; Draper, N.
Pub. info.: Proceedings of the Symposium on Surface Oxide Films.  pp.120-130,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-18
7.

Conference Proceedings
Conference Proceedings
7. In Situ Characterization of Si Gate Oxides by AC Impedance Measurements
Bardwell, J.A. ; Schmuki, P. ; Boehni, H.
Pub. info.: Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.41-52,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-33
8.

Conference Proceedings
Conference Proceedings
8. AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) With the Delta-Doped Barrier Layer
Fan, Z.Y. ; Li, J. ; Lin, J.Y. ; Jiang, H.X. ; Liu, Y. ; Bardwell, J.A. ; Webb, J.B. ; Tang, H.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.567-574,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743