Characterization of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
- Author(s):
Thuaire, A. Mermoux, M. Crisci, A. Camara, N. Bano, E. Baillet, F. Pernot, E. - Publication title:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 483-485
- Pub. Year:
- 2005
- Page(from):
- 437
- Page(to):
- 440
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
Trans Tech Publications |
8
Conference Proceedings
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Trans Tech Publications |
5
Conference Proceedings
Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |