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44 results

Conference Proceedings

1. COMPARATIVE IMAGING OF LIQUIDS IN ROCKS BY NMR AND DIFFERENTIAL X-RAY CT

Jeandey, C. ; Casagrande, J.M. ; Briguet, A. ; Ntoutoume, T. ; Guillot, G.

Pub. info.:	Advanced tomographic imaging methods for the analysis of materials : symposium held November 28-30, 1990, Boston, Massachusetts, U.S.A.. pp.175-182, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	217

Conference Proceedings

2. ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE

Marrakchi, G. ; Chaussemy, G. ; Laugier, A. ; Guillot, G.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.27-32, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

3. ABSOLUTE PHOTOIONIZATION CROSS SECTIONS OF THE ACCEPTOR STATE LEVEL OF CHROMIUM IN INDIUM PHOSPHIDE

Bremond, G. ; Guillot, G. ; Nouailhat, A. ; Picoli, G.

Pub. info.:	Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.. pp.371-376, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	46

Conference Proceedings

4. A COMPARATIVE STUDY OF DIFFERENT RAPID ANNEALING TECHNIQUES ON ELECTRICALLY ACTIVE DEFECTS IN UNIMPLANTED GALLIUM ARSENIDE

Marrakchi, G. ; Guillot, G. ; Nouailhat, A.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.509-514, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

5. PROPERTIES OF THE EL2 LEVEL IN ORGANOMETALLIC Ga1-XAlXAs

Ben Cherifa, A. ; Azoulay, R. ; Guillot, G.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.401-404, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

6. RELAXATION DEFECT CHARACTERIZATION OF RTCVD Si1-XGeX/Si HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL TECHNIQUES

Souifi, A. ; Bremond, G. ; Benyattou, T. ; Guillot, G. ; Dutartre, D.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.247-252, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

7. Formation, Morphology and Optical Properties of SiC Nanopowder

Nychyporuk, T. ; Marty, O. ; Bluet, J.M. ; Lysenko, V. ; Perrin, R. ; Guillot, G. ; Barbier, D.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.763-766, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. DEEP DONOR AND ACCEPTOR LEVELS INDUCED BY HIGH TEMPERATURE AND LONG TIME ANNEALING IN LEC GALLIUM ARSENIDE

Marrakchi, G. ; Kalboussi, A. ; Guillot, G. ; Ben Salem, M. ; Maaref, H. ; Molva, E.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.859-864, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

9. Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs

Trabelsi, M. ; Sghaier, N. ; Bluet, J.M. ; Yacoubi, N. ; Guillot, G. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1251-1254, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

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Conference Proceedings

10. THE DONOR STATE OF VANADIUM IN INDIUM PHOSPHIDE

Bremond, G. ; Nouailhat, A. ; Guillot, G. ; Deveaud, B. ; Lambert, B. ; Toudic, Y. ; Clerjaud, B. ; Naud, C.

Pub. info.:	Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.. pp.359-364, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	46

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