1.

Conference Proceedings
Conference Proceedings
1. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
Chichignoud, G. ; Auvray, L. ; Blanquet, E. ; Anikin, M. ; Pernot, E. ; Bluet, J.M. ; Chaudouet, P. ; Mermoux, M. ; Moisson, C. ; Letertre, F. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.71-74,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Formation, Morphology and Optical Properties of SiC Nanopowder
Nychyporuk, T. ; Marty, O. ; Bluet, J.M. ; Lysenko, V. ; Perrin, R. ; Guillot, G. ; Barbier, D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.763-766,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs
Trabelsi, M. ; Sghaier, N. ; Bluet, J.M. ; Yacoubi, N. ; Guillot, G. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1251-1254,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1363-1366,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy
Masarotto, L. ; Bluet, J.M. ; Berenguer, M. ; Girard, P. ; Guillot, G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.393-396,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
6.

Conference Proceedings
Conference Proceedings
6. Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
Gassoumi, M. ; Sghaier, N. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Bluet, J.M. ; Guillot, G. ; Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1185-1188,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC
Masarotto, L. ; Bluet, J.M. ; Guillot, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.601-604,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1363-1366,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. SiC Power Devices on QUASIC and SiCOI Smart-CutR Substrates: First Demonstrations
Letertre, F. ; Daval, N. ; Templier, F. ; Bano, E. ; Planson, D. ; Di Cioccio, L. ; Jalaguier, E. ; Bluet, J.M. ; Billon, T. ; Madar, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.813-818,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
Pernot, J. ; Bluet, J.M. ; Camassel, J. ; Cioccio, L.D.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.385-388,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356