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44 results

Conference Proceedings

1. Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001)

Salem, B. ; Guillot, G. ; Benyattou, T. ; Bru-Chevallier, C. ; Bremond, G. ; Monat, C. ; Gendry, M. ; Jbeli, A. ; Marie, X. ; Amand, T.

Pub. info.:	Quantum Dots, Nanoparticles, and Nanoclusters II. pp.27-30, 2005. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5734

Conference Proceedings

2. Optical Properties of Self-Assembled InAs Quantum Dots Grown on InAlAs/InP(001)

Salem, B. ; Benyattou, T. ; Guillot, G. ; Bremond, G. ; Brault, J. ; Gendry, M.

Pub. info.:	Quantum confined semiconductor nanostructures : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.. pp.77-172, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	737

Conference Proceedings

3. Growth and Characterization of InAs Quantum Dots on GaAs (100) Emitting at 1.31μm

Ceibert, V. ; Salem, B. ; Guillot, G. ; Bru-Chevallier, C. ; Grenouillet, L. ; Duvaut, P. ; Gilet, P. ; Million, A.

Pub. info.:	Progress in compound semiconductor materials -- electronic and optoelectronic applications. pp.387-392, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	799

Conference Proceedings

4. Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)

Hugonnard-Bruyere, E. ; Letertre, F. ; Cioccio, L. Di ; Bardeleben, H. J. von ; Cantin, J. L. ; Ouisse, T. ; Billon, T. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.715-718, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

5. Growth and Characterization of InAs Quantum Dots on GaAs(100) Emitting at 1.31μm

Celibert, V. ; Salem, B. ; Guillot, G. ; Bru-Chevallier, C. ; Grenouillet, L. ; Duvaut, P. ; Gilet, P. ; Million, A.

Pub. info.:	Self-organized processes in semiconductor heteroepitaxy : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.207-214, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	794

Conference Proceedings

6. Optical and electrical characteristics of LEDs fabricated from Si-nanocrystals. embedded in SiO2

Garrido, B. ; Gonzalez, O. ; Cheylan, S. ; Lopez, M. ; Perez-Rodriguez, A. ; Garcia, C. ; Pellegrino, P. ; Ferrer, R. ; Morante, J. R. ; De La Torre, J. ; Souifi, A. ; Poncet, A. ; Busseret, C. ; Lemiti, M. ; Bremond, G. ; Guillot, G.

Pub. info.:	Towards the first silicon laser. pp.45-54, 2003. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	93

Conference Proceedings

7. Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Sartel, C. ; Bluet, J.M. ; Souliere, V. ; El-Harrouni, I. ; Monteil, Y. ; Mermoux, M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.165-168, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

8. Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy

Bluet, J. M. ; Gassoumi, M. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Guillot, G. ; Morvan, E. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.865-868, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

Sartel, C. ; Souliere, V. ; Dazord, J. ; Monteil, Y. ; El-Harrouni, I. ; Bluet, J.M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.263-266, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

Masarotto, L. ; Bluet, J.M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.601-604, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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