Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Clear Form

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Pub. Date:

～

Type:

Conference Proceedings

Technical Paper

Academic Journal

Clear Form

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

25 results

Conference Proceedings

1. Electrical Activation of B⁺-Ions Implanted into 4H-SiC

T. Tsirimpis ; M. Krieger ; H.B. Weber ; G. Pensl

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.697-700, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

2. Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

G. Alfieri ; T. Kimoto ; G. Pensl

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.455-458, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

3. Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers

S. Beljakowa ; S.A. Reshanov ; B. Zippelius ; M. Krieger ; G. Pensl

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.427-430, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

4. Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons

M. Weidner ; L. Trapaidze ; G. Pensl ; S.A. Reshanov ; A. Schöner

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.439-442, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

5. Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC

K. Kawahara ; G. Alfieri ; T. Hiyoshi ; G. Pensl ; T. Kimoto

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.651-654, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

6. Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

S.A. Reshanov ; S. Beljakowa ; B. Zippelius ; G. Pensl ; K. Danno

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.423-426, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

7. Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

M. Obernhofer ; M. Krieger ; F. Schmid ; H.B. Weber ; G. Pensl ; A. Schoerner

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.343-346, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

8. Impurity Conduction in Silicon Carbide

M. Krieger ; K. Semmelroth ; H.B. Weber ; G. Pensl ; M. Rambach ; L. Frey

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.367-370, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

9. (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory

G. Pensl ; F. Schmid ; S.A. Reshanov ; H.B. Weber ; M. Bockstedte ; A. Mattausch ; O. Pankratov ; T. Ohshima ; H. Itoh

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.307-312, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

10.

Conference Proceedings

10. Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC

J. Weber ; S. Beljakowa ; H.B. Weber ; G. Pensl ; B. Zippelius

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.377-380, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

25 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: G. Pensl