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10 results

1.

Conference Proceedings

1. GaInAs/InP quantum well infrared photodetectors grown on Si substrates

Razeghi,M. ; Jiang,J. ; Jelen,C.L. ; Brown,G.J.

Pub. info.:	Materials for infrared detectors : 30 July-1 August 2001, San Diego, USA. pp.78-84, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4454

2.

Conference Proceedings

2. Growth and characterization of InAs/GaSb type-Il superlattices for long-wavelength infrared detectors

Mohseni,H. ; Michel,E.J. ; Razeghi,M. ; Mitchel W.C. ; Brown,G.J.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.30-38, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

3.

Conference Proceedings

3. Growth and characterization of type-? nonequilibrium photovoltaic detectors for long wavelength infrared range

Mohseni,H. ; Wojkowski,J.S. ; Tahraoui,A. ; Razeghi,M. ; Brown,G.J. ; Mitchel,W.C.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.153-160, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

4.

Conference Proceedings

4. Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

Erdtmann,M. ; Jiang,J. ; Matlis,A.W. ; Tahraoui,A. ; Jelen,C.L. ; Razeghi,M. ; Brown,G.J.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.227-232, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

5.

Conference Proceedings

5. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

Jelen,C. ; Slivken,S. ; David,T. ; Brown,G.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.96-104, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

6.

Conference Proceedings

6. Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monollthic integration with Si-based readout-integrated circultry for low cost and high performance

Razeghi,M. ; Erdtmann,M. ; Jelen,C.L. ; Diaz,J. ; Guastavinos,F. ; Brown,G.J. ; Park,Y.S.

Pub. info.:	Infrared technology and applications XXVI : 30 July - 3 August 2000, San Diego, USA. pp.335-347, 2000. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4130

7.

Conference Proceedings

7. Very long wavelength GaAs/GaInP quantum well infrared photodetectors

Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.144-152, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

8.

Conference Proceedings

8. Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

Saxler,A. ; Kim,K.S. ; Walker,D. ; Kung,P. ; Zhang,X. ; Brown,G.J. ; Mitchel,W.C. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1229-1234, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

9.

Conference Proceedings

9. Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

Hoff,J.R. ; Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices : 1-2 February 1996. pp.62-71, 1996. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2685

10.

Conference Proceedings

10. Multicolor 4- to 20-ｦﾌm InP-based quantum well infrared photodetectors

Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.147-154, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

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