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20 results

Conference Proceedings

1. On scaling the thin film Si thickness of SOI substrates. A Perspective on Wafer Bonding for Thin Film Devices

Hobart, K.D. ; Kub, F.J. ; Twigg, M.E. ; Fatemi, M.

Pub. info.:	Progress in SOI structures and devices operating at extreme conditions. pp.299-308, 2002. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	58

Conference Proceedings

2. Relaxation of a Strained Elastic Film on a Viscous Layer

Huang, R. ; Yin, H. ; Liang, J. ; Hobart, K.D. ; Sturm, J.C. ; Suo, Z.

Pub. info.:	Thin films : stresses and mechanical properties IX : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.. pp.115-120, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	695

Conference Proceedings

3. Structural Characterization of 3C-SiC Films Grown on Si Layers Wafer Bonded to Polycrystalline SiC Substrates

Myers, R.L. ; Hobart, K.D. ; Twigg, M. ; Rao, S. ; Fatemi, M. ; Kub, F.J. ; Saddow, S.E.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.145-148, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

4. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates

Myers, R.L. ; Saddow, S.E. ; Rao, S. ; Hobart, K.D. ; Fatemi, M. ; Kub, F.J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1511-1514, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

5. Electrical Characteristic of Low Temperature Direct Silicon-Silicon Bonding for Power Device Applications

Kub, F.J. ; Hobart, K.D. ; Desmond, C.A.

Pub. info.:	Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications. pp.466-472, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-36

Conference Proceedings

6. Si-Si PN Junctions Fabricated by Wafer Bonding in UHV

Hobart, K.D. ; Desmond, C.A. ; Kub, F.J. ; Twigg, M.E. ; Jernigan, G.G.

Pub. info.:	Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications. pp.409-416, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-36

Conference Proceedings

7. Interference-enhanced Raman Scattering in Strain Characterization of Ultra-Thin Strained SiGe and Si Films on Insulator

Yin, Haizhou ; Hobart, K.D. ; Shieh, S.R. ; Peterson, R.L. ; Duffy, T.S. ; Sturm, J.C.

Pub. info.:	High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.115-120, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	809

Conference Proceedings

8. Silicon Carbide Power Diodes as Radiation Detectors

Phlips, B.F. ; Hobart, K.D. ; Kub, F.J. ; Stahlbush, R.E. ; Das, M.K. ; De Geronimo, G. ; O' Connor, P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1465-1468, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

9. SiC Substrate Doping Profiles Using Commercial Optical Scanners

Caldwell, J.D. ; Glembocki, O.J. ; Hansen, D.M. ; Chung, G. ; Hobart, K.D. ; Kub, F.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.725-728, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

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Conference Proceedings

10. Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures

Liu, K.X. ; Stahlbush, R.E. ; Hobart, K.D. ; Sumakeris, J.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.387-390, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

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Author: Hobart, K.D.